Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature

Song Zhang, Qingfang Xu, Zhiying Hu, Peipei Zhu, Rong Tu, Lianmeng Zhang, Mingxu Han, Takashi Goto, Jiasheng Yan, Sijun Luo

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

<111>-β-SiC epilayers were prepared on <0001>-α(4H)-SiC by laser chemical vapor deposition at temperatures of 1390-1505 K. Non-explosive and non-corrosive precursor (Hexamethyldisilane, HMDS, Si(CH3)3-Si(CH3)3) was used in non-H2 (Ar) atmosphere. The β-SiC films grew epitaxially with in-plane orientation relationship of β-SiC [2¯02]//α(4H)-SiC [1000] and β-SiC [022¯]//α(4H)-SiC [0100]. The deposition rates of the β-SiC films were 31-261 μm h-1, which were significantly higher than those of conventional CVDs.

Original languageEnglish
Pages (from-to)4632-4635
Number of pages4
JournalCeramics International
Volume42
Issue number3
DOIs
Publication statusPublished - 2016 Feb 15

Keywords

  • Deposition rates
  • Epitaxial growth
  • Laser CVD
  • β-SiC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

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