Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature

Song Zhang; Qingfang Xu; Zhiying Hu; Peipei Zhu; Rong Tu; Lianmeng Zhang; Mingxu Han; Takashi Goto; Jiasheng Yan; Sijun Luo

doi:10.1016/j.ceramint.2015.11.132

Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature

Song Zhang, Qingfang Xu, Zhiying Hu, Peipei Zhu, Rong Tu, Lianmeng Zhang, Mingxu Han, Takashi Goto, Jiasheng Yan, Sijun Luo

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

<111>-β-SiC epilayers were prepared on <0001>-α(4H)-SiC by laser chemical vapor deposition at temperatures of 1390-1505 K. Non-explosive and non-corrosive precursor (Hexamethyldisilane, HMDS, Si(CH₃)₃-Si(CH₃)₃) was used in non-H₂ (Ar) atmosphere. The β-SiC films grew epitaxially with in-plane orientation relationship of β-SiC [2¯02]//α(4H)-SiC [1000] and β-SiC [022¯]//α(4H)-SiC [0100]. The deposition rates of the β-SiC films were 31-261 μm h^-1, which were significantly higher than those of conventional CVDs.

Original language	English
Pages (from-to)	4632-4635
Number of pages	4
Journal	Ceramics International
Volume	42
Issue number	3
DOIs	https://doi.org/10.1016/j.ceramint.2015.11.132
Publication status	Published - 2016 Feb 15

Keywords

Deposition rates
Epitaxial growth
Laser CVD
β-SiC

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2015.11.132

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title = "Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature",

abstract = "<111>-β-SiC epilayers were prepared on <0001>-α(4H)-SiC by laser chemical vapor deposition at temperatures of 1390-1505 K. Non-explosive and non-corrosive precursor (Hexamethyldisilane, HMDS, Si(CH3)3-Si(CH3)3) was used in non-H2 (Ar) atmosphere. The β-SiC films grew epitaxially with in-plane orientation relationship of β-SiC [2¯02]//α(4H)-SiC [1000] and β-SiC [022¯]//α(4H)-SiC [0100]. The deposition rates of the β-SiC films were 31-261 μm h-1, which were significantly higher than those of conventional CVDs.",

keywords = "Deposition rates, Epitaxial growth, Laser CVD, β-SiC",

author = "Song Zhang and Qingfang Xu and Zhiying Hu and Peipei Zhu and Rong Tu and Lianmeng Zhang and Mingxu Han and Takashi Goto and Jiasheng Yan and Sijun Luo",

note = "Funding Information: This work was supported by {"} National Natural Science Foundation of China , China{"} Nos. 51102101 , 51272196 , 51372188 , and 51521001 and the 111 Project ( B13035 ). This research was also supported by the International Science & Technology Cooperation Program of China ( 2014DFA53090 ) and the Natural Science Foundation of Hubei Province, China ( 2014CFB870 ), and the Fundamental Research Funds for the Central Universities, China (WUT: 2015III023). Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd and Techna Group S.r.l.",

year = "2016",

month = feb,

day = "15",

doi = "10.1016/j.ceramint.2015.11.132",

language = "English",

volume = "42",

pages = "4632--4635",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Limited",

number = "3",

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TY - JOUR

T1 - Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature

AU - Zhang, Song

AU - Xu, Qingfang

AU - Hu, Zhiying

AU - Zhu, Peipei

AU - Tu, Rong

AU - Zhang, Lianmeng

AU - Han, Mingxu

AU - Goto, Takashi

AU - Yan, Jiasheng

AU - Luo, Sijun

N1 - Funding Information: This work was supported by " National Natural Science Foundation of China , China" Nos. 51102101 , 51272196 , 51372188 , and 51521001 and the 111 Project ( B13035 ). This research was also supported by the International Science & Technology Cooperation Program of China ( 2014DFA53090 ) and the Natural Science Foundation of Hubei Province, China ( 2014CFB870 ), and the Fundamental Research Funds for the Central Universities, China (WUT: 2015III023). Publisher Copyright: © 2015 Elsevier Ltd and Techna Group S.r.l.

PY - 2016/2/15

Y1 - 2016/2/15

N2 - <111>-β-SiC epilayers were prepared on <0001>-α(4H)-SiC by laser chemical vapor deposition at temperatures of 1390-1505 K. Non-explosive and non-corrosive precursor (Hexamethyldisilane, HMDS, Si(CH3)3-Si(CH3)3) was used in non-H2 (Ar) atmosphere. The β-SiC films grew epitaxially with in-plane orientation relationship of β-SiC [2¯02]//α(4H)-SiC [1000] and β-SiC [022¯]//α(4H)-SiC [0100]. The deposition rates of the β-SiC films were 31-261 μm h-1, which were significantly higher than those of conventional CVDs.

AB - <111>-β-SiC epilayers were prepared on <0001>-α(4H)-SiC by laser chemical vapor deposition at temperatures of 1390-1505 K. Non-explosive and non-corrosive precursor (Hexamethyldisilane, HMDS, Si(CH3)3-Si(CH3)3) was used in non-H2 (Ar) atmosphere. The β-SiC films grew epitaxially with in-plane orientation relationship of β-SiC [2¯02]//α(4H)-SiC [1000] and β-SiC [022¯]//α(4H)-SiC [0100]. The deposition rates of the β-SiC films were 31-261 μm h-1, which were significantly higher than those of conventional CVDs.

KW - Deposition rates

KW - Epitaxial growth

KW - Laser CVD

KW - β-SiC

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M3 - Article

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JO - Ceramics International

JF - Ceramics International

IS - 3

ER -

Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature

Abstract

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