Ultra compact, low thermal impedance and high reliability module structure with SiC Schottky barrier diodes

Yoshinari Ikeda, Norihiro Nashida, Masafumi Horio, Hiromu Takubo, Yoshikazu Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

An advanced module structure for taking advantage of superior characteristics of Silicon Carbide (SiC) device was researched and developed. This structure can realize about four times of power rating density and one half of thermal impedance compared to that of conventional structure. Also, this structure achieved to have higher reliability by applying epoxy molding structure and copper pin connection to conduct current to/from power chips instead of aluminum bonding wire.

Original languageEnglish
Title of host publication2011 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011
Pages1298-1300
Number of pages3
DOIs
Publication statusPublished - 2011 May 13
Externally publishedYes
Event26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011 - Fort Worth, TX, United States
Duration: 2011 Mar 62011 Mar 10

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Other

Other26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011
CountryUnited States
CityFort Worth, TX
Period11/3/611/3/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Ikeda, Y., Nashida, N., Horio, M., Takubo, H., & Takahashi, Y. (2011). Ultra compact, low thermal impedance and high reliability module structure with SiC Schottky barrier diodes. In 2011 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011 (pp. 1298-1300). [5744760] (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). https://doi.org/10.1109/APEC.2011.5744760