Ultra compact and high reliable SiC MOSFET power module with 200°C operating capability

Masafumi Horio, Yuji Iizuka, Yoshinari Ikeda, Eiji Mochizuki, Yoshikazu Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

26 Citations (Scopus)

Abstract

Aluminium wirebond-less power module structure was investigated and presented in ISPSD 2011 [1]. The features of this structure are high-density packaging with Copper pins connection and power circuit board, low thermal resistance with thick Copper block on Silicon Nitride ceramic substrate and high reliability with epoxy resin moulding. This paper introduces Silicon Carbide MOSFET power module with this developed structure. High temperature operating capability up to 200°C is achieved with newly developed epoxy resin and Silver sintering technology. Low internal inductance is designed by laminating current paths to take an advantage of developed structure. SiC MOSFET 100A/1200V module was designed. Loss evaluation with this SiC module shows superior performance with SiC devices and also with developed structure.

Original languageEnglish
Title of host publicationProceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
Pages81-84
Number of pages4
DOIs
Publication statusPublished - 2012 Aug 8
Externally publishedYes
Event24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 - Bruges, Belgium
Duration: 2012 Jun 32012 Jun 7

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Other

Other24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
CountryBelgium
CityBruges
Period12/6/312/6/7

Keywords

  • SiC power module
  • Silver sintering
  • epoxy resin moulding

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Horio, M., Iizuka, Y., Ikeda, Y., Mochizuki, E., & Takahashi, Y. (2012). Ultra compact and high reliable SiC MOSFET power module with 200°C operating capability. In Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 (pp. 81-84). [6229028] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2012.6229028