Ultimate top-down processes for future nanoscale devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

For the past 30 years, plasma etching technology has led in the efforts to shrink the pattern size of ultralarge-scale integrated (ULSI) devices. However, inherent problems in the plasma processes, such as charge buildup and UV photon radiation, limit the etching performance for nanoscale devices. To overcome these problems and fabricate sub-10-nm devices in practice, neutral-beam etching has been proposed. In this paper, we introduce the ultimate etching processes using neutral-beam sources and discuss the fusion of top-down and bottom-up processing for future nanoscale devices. Neutral beams can perform atomically damage-free etching and surface modification of inorganic and organic materials. This technique is a promising candidate for the practical fabrication technology for future nano-devices.

Original languageEnglish
Title of host publicationAdvanced Etch Technology for Nanopatterning
DOIs
Publication statusPublished - 2012 Dec 1
EventAdvanced Etch Technology for Nanopatterning - San Jose, CA, United States
Duration: 2012 Feb 132012 Feb 14

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8328
ISSN (Print)0277-786X

Other

OtherAdvanced Etch Technology for Nanopatterning
CountryUnited States
CitySan Jose, CA
Period12/2/1312/2/14

Keywords

  • Neutral beam
  • Plasma etching
  • Radiation damage
  • Top-down process
  • sub-10nm patterning

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Samukawa, S. (2012). Ultimate top-down processes for future nanoscale devices. In Advanced Etch Technology for Nanopatterning [832804] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8328). https://doi.org/10.1117/12.920490