Ultimate top-down etching processes for future nanoscale devices

Seiji Samukawa, Kazuhiko Endo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Our newly developed neutral beam (NB) etching could firstly accomplish the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-Fins. The fabricated FinFETs realize higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically flatness of the neutral beam etched surfaces. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages462-465
Number of pages4
ISBN (Print)1424401615, 9781424401611
DOIs
Publication statusPublished - 2006
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2006 Oct 232006 Oct 26

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/TerritoryChina
CityShanghai
Period06/10/2306/10/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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