TY - GEN
T1 - Ultimate top-down etching processes for future nanoscale devices
AU - Samukawa, Seiji
AU - Endo, Kazuhiko
PY - 2006
Y1 - 2006
N2 - Our newly developed neutral beam (NB) etching could firstly accomplish the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-Fins. The fabricated FinFETs realize higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically flatness of the neutral beam etched surfaces. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication.
AB - Our newly developed neutral beam (NB) etching could firstly accomplish the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-Fins. The fabricated FinFETs realize higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically flatness of the neutral beam etched surfaces. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication.
UR - http://www.scopus.com/inward/record.url?scp=34547320968&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547320968&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2006.306301
DO - 10.1109/ICSICT.2006.306301
M3 - Conference contribution
AN - SCOPUS:34547320968
SN - 1424401615
SN - 9781424401611
T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
SP - 462
EP - 465
BT - ICSICT-2006
PB - IEEE Computer Society
T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Y2 - 23 October 2006 through 26 October 2006
ER -