Ultimate Sensing with an Ultrathin Single Crystalline Silicon Resonator

Takahito Ono, Masayoshi Esashi

Research output: Contribution to conferencePaperpeer-review

Abstract

Miniaturization of resonating sensors is promising method to reduce the thermo-mechanical noise and raise the mass and force sensitivity. Fabrication technique based on SOI (silicon on insulator) wafer was developed for making ultrathin single-crystalline structures down to 20 nm thick. Mechanical Quality factor (Q-factor) of the cantilever decreases with decreasing the thickness due to the energy dissipation on the surface, however heating in Ultra-high vacuum (UHV) make the surface clean in atomic scale, result in dramatic increase of the Q-factor. All measurements were performed in an UHV chamber equipped with a laser Doppler vibrometer. Leaving the cleaned cantilever in UHV, small quantities of molecule adsorbed on the cantilever and lower the Q-factor. These behaviors are measured on both of 170 nm thick Si(100) and 50 nm thick Si(111) cantilevers. Using these ultra-thin resonators, mass change below pico gram and external force loaded on the cantilever are demonstrated.

Original languageEnglish
Pages916-921
Number of pages6
Publication statusPublished - 2002 Dec 1
EventFirst IEEE International Conference on Sensors - IEEE Sensors 2002 - Orlando, FL, United States
Duration: 2002 Jun 122002 Jun 14

Other

OtherFirst IEEE International Conference on Sensors - IEEE Sensors 2002
CountryUnited States
CityOrlando, FL
Period02/6/1202/6/14

Keywords

  • Magnetometry
  • Mass sensing
  • Mechanical quality factor
  • Single Crystalline silicon resonator

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

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