Ultimate-low-k SiOCH film (k=1.3) with sufficient modulus (>5 GPa) and ultra-high thermal stability formed by low-temperature pulse-time-modulated neutral-beam-enhanced CVD

Shigeo Yasuhara, Toru Sasaki, Tsutomu Shimayama, Kunitoshi Tajima, Hisashi Yano, Shingo Kadomura, Masaki Yoshimaru, Noriaki Matsunaga, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated a pulse-time-modulated neutral-beam-enhanced CVD at a low substrate temperature of -70°C with dimethoxy-tetramethyl-disiloxane to form low-k SiOCH film. This method provided an ultimate low-k SiOCH film with a k-value of 1.3, a sufficient modulus of more than 5 GPa, and ultra-high thermal stability (no desorption of CH3 and H2O by 400°C annealing). This result is explained by the extremely high polymerization due to a drastic increase in absorption probability of the precursor combined with the pulse-time-modulated neutral beam irradiation and low substrate temperature of -70°C.

Original languageEnglish
Title of host publication2010 IEEE International Interconnect Technology Conference, IITC 2010
DOIs
Publication statusPublished - 2010 Aug 20
Event2010 IEEE International Interconnect Technology Conference, IITC 2010 - Burlingame, CA, United States
Duration: 2010 Jun 62010 Jun 9

Publication series

Name2010 IEEE International Interconnect Technology Conference, IITC 2010

Other

Other2010 IEEE International Interconnect Technology Conference, IITC 2010
CountryUnited States
CityBurlingame, CA
Period10/6/610/6/9

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture

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    Yasuhara, S., Sasaki, T., Shimayama, T., Tajima, K., Yano, H., Kadomura, S., Yoshimaru, M., Matsunaga, N., & Samukawa, S. (2010). Ultimate-low-k SiOCH film (k=1.3) with sufficient modulus (>5 GPa) and ultra-high thermal stability formed by low-temperature pulse-time-modulated neutral-beam-enhanced CVD. In 2010 IEEE International Interconnect Technology Conference, IITC 2010 [5510729] (2010 IEEE International Interconnect Technology Conference, IITC 2010). https://doi.org/10.1109/IITC.2010.5510729