We have performed resistivity measurements on UGe2 at low temperatures (0.3 K≤T) in a wide range of magnetic fields (Bappl≤17.5 T) and pressure (P≤19.8 kbar). The residual resistivity and the T2 coeeficient of resistivity are given as functions of Bappl and P. Their changes across magnetic phases are discussed.
- High pressure
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics