Type-II Ge/Si quantum dot superlattice for intermediate-band solar cell applications

Weiguo Hu, Mohd Erman Fauzi, Makoto Igarashi, Akio Higo, Ming Yi Lee, Yiming Li, Noritaka Usami, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A Ge/Si type-II quantum dot (QD) has been developed for use in all-Si intermediate-band solar cell (IBSC) applications. A top-down process is used to fabricate the ultra-high-quality QD superlattice. A newly developed 3D finite element method was used to solve several key design problems in achieving a practical structure. Theoretical calculations revealed that a heavy hole state can act as an ideal intermediate band when the interdot space ranges from 0.5 to 4 nm. An IBSC based on this superlattice dramatically enhanced conversion efficiency for concentration applications. For one-sun applications, H-passivizing Si and/or regrowthing amorphous SiC have a great potential to improve the conversion efficiency.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1021-1023
Number of pages3
ISBN (Print)9781479932993
DOIs
Publication statusPublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 2013 Jun 162013 Jun 21

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL
Period13/6/1613/6/21

Keywords

  • Amorphous materials
  • Photovoltaic cells
  • Quantum dot
  • Silicon

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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