Type and charge states of point defects in heavily As- and B-doped silicon

Y. Nakabayashi, H. I. Osman, K. Yokota, K. Toyonaga, S. Matsumoto, J. Murota, K. Wada, T. Abe

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

In order to determine the type and charge states of dominant point defects in As- and B-doped silicon, self-diffusion in doped natural Si/ 30Si/natural Si double-heterostructures has been investigated under oxidizing ambient. Enhanced self-diffusion is observed in B-doped Si, while retarded self-diffusion is observed in As-doped Si. These results indicate that single-charged Si self-interstitals (I+ donors) are dominant in B-doped Si, while excess single-charged vacancies (V- acceptors) exist in As-doped Si.

Original languageEnglish
Pages (from-to)15-19
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume6
Issue number1-3
DOIs
Publication statusPublished - 2003 Feb

Keywords

  • Point-defects
  • Self-diffusion
  • Silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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