Two-way shape memory behavior of sputter-deposited Ni-rich Ni 2MnGa films

Makoto Ohtsuka; Minoru Matsumoto; Kimio Itagaki

doi:10.1177/1045389X06064606

Two-way shape memory behavior of sputter-deposited Ni-rich Ni 2MnGa films

Makoto Ohtsuka, Minoru Matsumoto, Kimio Itagaki

Center for Mineral Processing and Metallurgy (CMPM)

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The properties of the Ni-rich Ni₂MnGa films and their shape memory behavior are investigated with respect to various sputtering conditions. The films are deposited on a poly-vinyl alcohol substrate with a radio-frequency magnetron sputtering apparatus using Ni₅₀Mn₂₅Ga ₂₅ and Ni₅₂Mn₂₄Ga₂₄ targets. The sputtering power is in the range of 50-400 W. After separating from the substrate, the films are vacuum-annealed at 1073 K for 3.6 ks. The chemical composition of the films depends on the sputtering power. The martensitic transformation temperature increases with the valence electron density of the films, while the Curie temperature slightly decreases. The film obtained with 50 W using the Ni₅₀Mn₂₅Ga₂₅ target after heat treatment at 1073 K shows a two-way shape memory effect through the martensitic transformation and its reversion.

Original language	English
Pages (from-to)	1069-1074
Number of pages	6
Journal	Journal of Intelligent Material Systems and Structures
Volume	17
Issue number	12
DOIs	https://doi.org/10.1177/1045389X06064606
Publication status	Published - 2006 Dec 1

Keywords

Crystal structure
Ferromagnetic shape memory alloy
Martensitic transformation
Ni-Mn-Ga
Sputtered film
Two-way shape memory effect

ASJC Scopus subject areas

Materials Science(all)

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10.1177/1045389X06064606

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title = "Two-way shape memory behavior of sputter-deposited Ni-rich Ni 2MnGa films",

abstract = "The properties of the Ni-rich Ni2MnGa films and their shape memory behavior are investigated with respect to various sputtering conditions. The films are deposited on a poly-vinyl alcohol substrate with a radio-frequency magnetron sputtering apparatus using Ni50Mn25Ga 25 and Ni52Mn24Ga24 targets. The sputtering power is in the range of 50-400 W. After separating from the substrate, the films are vacuum-annealed at 1073 K for 3.6 ks. The chemical composition of the films depends on the sputtering power. The martensitic transformation temperature increases with the valence electron density of the films, while the Curie temperature slightly decreases. The film obtained with 50 W using the Ni50Mn25Ga25 target after heat treatment at 1073 K shows a two-way shape memory effect through the martensitic transformation and its reversion.",

keywords = "Crystal structure, Ferromagnetic shape memory alloy, Martensitic transformation, Ni-Mn-Ga, Sputtered film, Two-way shape memory effect",

author = "Makoto Ohtsuka and Minoru Matsumoto and Kimio Itagaki",

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T1 - Two-way shape memory behavior of sputter-deposited Ni-rich Ni 2MnGa films

AU - Ohtsuka, Makoto

AU - Matsumoto, Minoru

AU - Itagaki, Kimio

PY - 2006/12/1

Y1 - 2006/12/1

N2 - The properties of the Ni-rich Ni2MnGa films and their shape memory behavior are investigated with respect to various sputtering conditions. The films are deposited on a poly-vinyl alcohol substrate with a radio-frequency magnetron sputtering apparatus using Ni50Mn25Ga 25 and Ni52Mn24Ga24 targets. The sputtering power is in the range of 50-400 W. After separating from the substrate, the films are vacuum-annealed at 1073 K for 3.6 ks. The chemical composition of the films depends on the sputtering power. The martensitic transformation temperature increases with the valence electron density of the films, while the Curie temperature slightly decreases. The film obtained with 50 W using the Ni50Mn25Ga25 target after heat treatment at 1073 K shows a two-way shape memory effect through the martensitic transformation and its reversion.

AB - The properties of the Ni-rich Ni2MnGa films and their shape memory behavior are investigated with respect to various sputtering conditions. The films are deposited on a poly-vinyl alcohol substrate with a radio-frequency magnetron sputtering apparatus using Ni50Mn25Ga 25 and Ni52Mn24Ga24 targets. The sputtering power is in the range of 50-400 W. After separating from the substrate, the films are vacuum-annealed at 1073 K for 3.6 ks. The chemical composition of the films depends on the sputtering power. The martensitic transformation temperature increases with the valence electron density of the films, while the Curie temperature slightly decreases. The film obtained with 50 W using the Ni50Mn25Ga25 target after heat treatment at 1073 K shows a two-way shape memory effect through the martensitic transformation and its reversion.

KW - Crystal structure

KW - Ferromagnetic shape memory alloy

KW - Martensitic transformation

KW - Ni-Mn-Ga

KW - Sputtered film

KW - Two-way shape memory effect

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Two-way shape memory behavior of sputter-deposited Ni-rich Ni 2MnGa films

Abstract

Keywords

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