A two-step method which combines hydrogen treatment and in situ UHV Si beam etching has been developed. The advantage of this combined H2/Si etching to prepare atomically clean 6H-SiC(0001) surface is discussed using scanning tunneling microscopy (STM). A quality GaN thin film evidenced by flat morphology and well-defined superstructures has been grown on this substrate.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)