Two-step preparation of 6H-SiC(0001) surface for epitaxial growth of GaN thin film

Qizhen Xue, Q. K. Xue, Y. Hasegawa, I. S.T. Tsong, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    46 Citations (Scopus)

    Abstract

    A two-step method which combines hydrogen treatment and in situ UHV Si beam etching has been developed. The advantage of this combined H2/Si etching to prepare atomically clean 6H-SiC(0001) surface is discussed using scanning tunneling microscopy (STM). A quality GaN thin film evidenced by flat morphology and well-defined superstructures has been grown on this substrate.

    Original languageEnglish
    Pages (from-to)2468-2470
    Number of pages3
    JournalApplied Physics Letters
    Volume74
    Issue number17
    DOIs
    Publication statusPublished - 1999 Apr 26

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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