Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution

Yuki Sugama, Yoshiaki Watanabe, Rihito Kuroda, Masahiro Yamamoto, Tetsuya Goto, Toshiro Yasuda, Hiroshi Hamori, Naoya Kuriyama, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review


This paper presents newly developed two high-precision CMOS proximity capacitance image sensors: Chip A with 12 µm pitch pixels with a large detection area of 1.68 cm2; Chip B with 2.8 µm pitch 1.8 M pixels for a higher resolution. Both fabricated chips achieved a capacitance detection precision of less than 100 zF (10−19 F) at an input voltage of 20 V and less than 10 zF (10−20 F) at 300 V due to the noise cancelling technique. Furthermore, by using multiple input pulse amplitudes, a capacitance detection dynamic range of up to 123 dB was achieved. The spatial resolution improvement was confirmed by the experimentally obtained modulation transfer function for Chip B with various line and space pattens. The examples of capacitance imaging using the fabricated chips were also demonstrated.

Original languageEnglish
Article number2770
Issue number7
Publication statusPublished - 2022 Apr 1


  • CMOS
  • high precision
  • high resolution
  • image sensor
  • large format
  • proximity capacitance

ASJC Scopus subject areas

  • Analytical Chemistry
  • Information Systems
  • Biochemistry
  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Electrical and Electronic Engineering


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