Two-dimensional local deep level transient spectroscopy imaging using super-higher-order scanning nonlinear dielectric microscopy

N. Chinone, Y. Cho, R. Kosugi, Y. Tanaka, S. Harada, H. Okumura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique, SiO2SiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiO2SiC interface.

Original languageEnglish
Title of host publicationISTFA 2016 - Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis
PublisherASM International
Pages441-445
Number of pages5
ISBN (Electronic)1627081356, 9781627081351
Publication statusPublished - 2016
Event42nd International Symposium for Testing and Failure Analysis, ISTFA 2016 - Fort Worth, United States
Duration: 2016 Nov 62016 Nov 10

Publication series

NameConference Proceedings from the International Symposium for Testing and Failure Analysis

Other

Other42nd International Symposium for Testing and Failure Analysis, ISTFA 2016
CountryUnited States
CityFort Worth
Period16/11/616/11/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Safety, Risk, Reliability and Quality

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