Two-dimensional InSe as a potential thermoelectric material

Nguyen T. Hung; Ahmad R.T. Nugraha; Riichiro Saito

doi:10.1063/1.5001184

Two-dimensional InSe as a potential thermoelectric material

Nguyen T. Hung, Ahmad R.T. Nugraha, Riichiro Saito

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

Thermoelectric properties of monolayer indium selenide (InSe) are investigated by using Boltzmann transport theory and first-principles calculations as a function of Fermi energy and crystal orientation. We find that the maximum power factor of p-type (n-type) monolayer InSe can be as large as 0.049 (0.043) W/K²m at 300 K in the armchair direction. The excellent thermoelectric performance of monolayer InSe is attributed to both its Seebeck coefficient and electrical conductivity. The large Seebeck coefficient originates from the moderate (about 2 eV) bandgap of monolayer InSe as an indirect gap semiconductor, while its large electrical conductivity is due to its unique two-dimensional density of states (DOS), which consists of an almost constant DOS near the conduction band bottom and a sharp peak near the valence band top.

Original language	English
Article number	092107
Journal	Applied Physics Letters
Volume	111
Issue number	9
DOIs	https://doi.org/10.1063/1.5001184
Publication status	Published - 2017 Aug 28

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Two-dimensional InSe as a potential thermoelectric material",

abstract = "Thermoelectric properties of monolayer indium selenide (InSe) are investigated by using Boltzmann transport theory and first-principles calculations as a function of Fermi energy and crystal orientation. We find that the maximum power factor of p-type (n-type) monolayer InSe can be as large as 0.049 (0.043) W/K2m at 300 K in the armchair direction. The excellent thermoelectric performance of monolayer InSe is attributed to both its Seebeck coefficient and electrical conductivity. The large Seebeck coefficient originates from the moderate (about 2 eV) bandgap of monolayer InSe as an indirect gap semiconductor, while its large electrical conductivity is due to its unique two-dimensional density of states (DOS), which consists of an almost constant DOS near the conduction band bottom and a sharp peak near the valence band top.",

author = "Hung, {Nguyen T.} and Nugraha, {Ahmad R.T.} and Riichiro Saito",

note = "Funding Information: N.T.H. and A.R.T.N are supported by the Interdepartmental Doctoral Degree Program for Multidimensional Materials Science Leaders in Tohoku University. R.S. acknowledges JSPS KAKENHI Grant Nos. JP25107005 and JP25286005.",

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T1 - Two-dimensional InSe as a potential thermoelectric material

AU - Hung, Nguyen T.

AU - Nugraha, Ahmad R.T.

AU - Saito, Riichiro

N1 - Funding Information: N.T.H. and A.R.T.N are supported by the Interdepartmental Doctoral Degree Program for Multidimensional Materials Science Leaders in Tohoku University. R.S. acknowledges JSPS KAKENHI Grant Nos. JP25107005 and JP25286005.

PY - 2017/8/28

Y1 - 2017/8/28

N2 - Thermoelectric properties of monolayer indium selenide (InSe) are investigated by using Boltzmann transport theory and first-principles calculations as a function of Fermi energy and crystal orientation. We find that the maximum power factor of p-type (n-type) monolayer InSe can be as large as 0.049 (0.043) W/K2m at 300 K in the armchair direction. The excellent thermoelectric performance of monolayer InSe is attributed to both its Seebeck coefficient and electrical conductivity. The large Seebeck coefficient originates from the moderate (about 2 eV) bandgap of monolayer InSe as an indirect gap semiconductor, while its large electrical conductivity is due to its unique two-dimensional density of states (DOS), which consists of an almost constant DOS near the conduction band bottom and a sharp peak near the valence band top.

AB - Thermoelectric properties of monolayer indium selenide (InSe) are investigated by using Boltzmann transport theory and first-principles calculations as a function of Fermi energy and crystal orientation. We find that the maximum power factor of p-type (n-type) monolayer InSe can be as large as 0.049 (0.043) W/K2m at 300 K in the armchair direction. The excellent thermoelectric performance of monolayer InSe is attributed to both its Seebeck coefficient and electrical conductivity. The large Seebeck coefficient originates from the moderate (about 2 eV) bandgap of monolayer InSe as an indirect gap semiconductor, while its large electrical conductivity is due to its unique two-dimensional density of states (DOS), which consists of an almost constant DOS near the conduction band bottom and a sharp peak near the valence band top.

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