Abstract
Thermoelectric properties of monolayer indium selenide (InSe) are investigated by using Boltzmann transport theory and first-principles calculations as a function of Fermi energy and crystal orientation. We find that the maximum power factor of p-type (n-type) monolayer InSe can be as large as 0.049 (0.043) W/K2m at 300 K in the armchair direction. The excellent thermoelectric performance of monolayer InSe is attributed to both its Seebeck coefficient and electrical conductivity. The large Seebeck coefficient originates from the moderate (about 2 eV) bandgap of monolayer InSe as an indirect gap semiconductor, while its large electrical conductivity is due to its unique two-dimensional density of states (DOS), which consists of an almost constant DOS near the conduction band bottom and a sharp peak near the valence band top.
Original language | English |
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Article number | 092107 |
Journal | Applied Physics Letters |
Volume | 111 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2017 Aug 28 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)