Two-dimensional imaging of trap distribution in SiO2/SiC interface using local deep level transient spectroscopy based on super-higher-order scanning nonlinear dielectric microscopy

Norimichi Chinone; Ryoji Kosugi; Yasunori Tanaka; Shinsuke Harada; Hajime Okumura; Yasuo Cho

doi:10.4028/www.scientific.net/MSF.897.127

Two-dimensional imaging of trap distribution in SiO₂/SiC interface using local deep level transient spectroscopy based on super-higher-order scanning nonlinear dielectric microscopy

Norimichi Chinone, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, Yasuo Cho

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique, SiO₂/SiC structure samples with different post oxidation annealing (POA) conditions were measured. We observed that the local DLTS signal decreases with POA levels, which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiO₂/SiC interface.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2016
Editors	Konstantinos Zekentes, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Nikolaos Frangis
Publisher	Trans Tech Publications Ltd
Pages	127-130
Number of pages	4
ISBN (Print)	9783035710434
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.897.127
Publication status	Published - 2017
Event	11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 - Halkidiki, Greece Duration: 2016 Sep 25 → 2016 Sep 29

Publication series

Name	Materials Science Forum
Volume	897 MSF
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016
Country	Greece
City	Halkidiki
Period	16/9/25 → 16/9/29

Keywords

Local deep level transient spectroscopy
Scanning nonlinear dielectric microscopy
SiO/SiC interface

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Chinone, N., Kosugi, R., Tanaka, Y., Harada, S., Okumura, H., & Cho, Y. (2017). Two-dimensional imaging of trap distribution in SiO₂/SiC interface using local deep level transient spectroscopy based on super-higher-order scanning nonlinear dielectric microscopy. In K. Zekentes, K. Zekentes, K. V. Vasilevskiy, & N. Frangis (Eds.), Silicon Carbide and Related Materials 2016 (pp. 127-130). (Materials Science Forum; Vol. 897 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.897.127

Two-dimensional imaging of trap distribution in SiO₂/SiC interface using local deep level transient spectroscopy based on super-higher-order scanning nonlinear dielectric microscopy. / Chinone, Norimichi; Kosugi, Ryoji; Tanaka, Yasunori; Harada, Shinsuke; Okumura, Hajime; Cho, Yasuo.

Silicon Carbide and Related Materials 2016. ed. / Konstantinos Zekentes; Konstantinos Zekentes; Konstantin V. Vasilevskiy; Nikolaos Frangis. Trans Tech Publications Ltd, 2017. p. 127-130 (Materials Science Forum; Vol. 897 MSF).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chinone, N, Kosugi, R, Tanaka, Y, Harada, S, Okumura, H & Cho, Y 2017, Two-dimensional imaging of trap distribution in SiO₂/SiC interface using local deep level transient spectroscopy based on super-higher-order scanning nonlinear dielectric microscopy. in K Zekentes, K Zekentes, KV Vasilevskiy & N Frangis (eds), Silicon Carbide and Related Materials 2016. Materials Science Forum, vol. 897 MSF, Trans Tech Publications Ltd, pp. 127-130, 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Halkidiki, Greece, 16/9/25. https://doi.org/10.4028/www.scientific.net/MSF.897.127

Chinone N, Kosugi R, Tanaka Y, Harada S, Okumura H, Cho Y. Two-dimensional imaging of trap distribution in SiO₂/SiC interface using local deep level transient spectroscopy based on super-higher-order scanning nonlinear dielectric microscopy. In Zekentes K, Zekentes K, Vasilevskiy KV, Frangis N, editors, Silicon Carbide and Related Materials 2016. Trans Tech Publications Ltd. 2017. p. 127-130. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.897.127

Chinone, Norimichi ; Kosugi, Ryoji ; Tanaka, Yasunori ; Harada, Shinsuke ; Okumura, Hajime ; Cho, Yasuo. / Two-dimensional imaging of trap distribution in SiO₂/SiC interface using local deep level transient spectroscopy based on super-higher-order scanning nonlinear dielectric microscopy. Silicon Carbide and Related Materials 2016. editor / Konstantinos Zekentes ; Konstantinos Zekentes ; Konstantin V. Vasilevskiy ; Nikolaos Frangis. Trans Tech Publications Ltd, 2017. pp. 127-130 (Materials Science Forum).

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abstract = "A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique, SiO2/SiC structure samples with different post oxidation annealing (POA) conditions were measured. We observed that the local DLTS signal decreases with POA levels, which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiO2/SiC interface.",

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