Two-dimensional imaging of trap distribution in SiO2/SiC interface using local deep level transient spectroscopy based on super-higher-order scanning nonlinear dielectric microscopy

Norimichi Chinone, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique, SiO2/SiC structure samples with different post oxidation annealing (POA) conditions were measured. We observed that the local DLTS signal decreases with POA levels, which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiO2/SiC interface.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2016
EditorsKonstantinos Zekentes, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Nikolaos Frangis
PublisherTrans Tech Publications Ltd
Pages127-130
Number of pages4
ISBN (Print)9783035710434
DOIs
Publication statusPublished - 2017
Event11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 - Halkidiki, Greece
Duration: 2016 Sep 252016 Sep 29

Publication series

NameMaterials Science Forum
Volume897 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016
CountryGreece
CityHalkidiki
Period16/9/2516/9/29

Keywords

  • Local deep level transient spectroscopy
  • Scanning nonlinear dielectric microscopy
  • SiO/SiC interface

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Chinone, N., Kosugi, R., Tanaka, Y., Harada, S., Okumura, H., & Cho, Y. (2017). Two-dimensional imaging of trap distribution in SiO2/SiC interface using local deep level transient spectroscopy based on super-higher-order scanning nonlinear dielectric microscopy. In K. Zekentes, K. Zekentes, K. V. Vasilevskiy, & N. Frangis (Eds.), Silicon Carbide and Related Materials 2016 (pp. 127-130). (Materials Science Forum; Vol. 897 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.897.127