Two-dimensional electron gas formed in a back-gated undoped heterostructure

Y. Hirayama, K. Muraki, T. Saku

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49 Citations (Scopus)


By using a back-gate operation, a high-quality two-dimensional electron gas (2DEG) is formed in an undoped GaAs/AlGaAs inverted heterostructure. A high mobility of around 3×106 cm2/Vs at 1.6 K is obtained for the structure without any compensating surface doping. The electron density is controllable down to 7×109 cm-2. The relation between electron density and mobility is studied for samples both with and without a surface gate. The obtained results indicate that background impurities and an inhomogeneity of the electric field coming from the surface govern the mobility in a low-electron-density region and that the interface inhomogeneity becomes important at a high electron density.

Original languageEnglish
Pages (from-to)1745-1747
Number of pages3
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 1998
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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