Two-dimensional distribution of leakage current in ultrathin oxide on stepped Si surface

M. Murata, N. Tokuda, D. Hojo, K. Yamabe

Research output: Contribution to journalConference articlepeer-review

Abstract

Two-dimensional distribution of leakage current in ultrathin SiO2 film formed on stepped Si surface was investigated by using atomic force microscopy with conductive cantilever. Regions with the initially higher leakage current of 1.0nm thick SiO2 were observed in line along the bunched atomic steps. The higher leakage current regions change from line to spot along steps and finally disappear with increasing oxide thickness. Even if the leakage current is not observed at the initial stage, the local leakage current began to be observed after high voltage stress application. It is found that the degraded regions under high electric stress are also spotty along the atomic steps. It is found that for the ultrathin oxide, their initial leakage and the reliability depend on the micro-structure on the Si surface such an atomic step and so on.

Original languageEnglish
Pages (from-to)425-433
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4218
Publication statusPublished - 2000 Dec 1
EventHigh Purity Silicon VI - Phoenix, AZ, United States
Duration: 2000 Oct 222000 Oct 27

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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