An accurate device simulator for polycrystalline-silicon thin-film transistors is developed. In this simulator, the influences of grain-boundaries (GBs) are incorporated into the mobility model, and the basic semiconductor equations are solved combining with the carrier generation/recombination model. As a result, it becomes possible to quantitatively analyze the influence of the GBs on the kink effect and the avalanche breakdown phenomenon, and the influences of the GB trap density and the grain size on the device characteristics.
|Number of pages||4|
|Publication status||Published - 1990 Dec 1|
|Event||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
Duration: 1990 Aug 22 → 1990 Aug 24
|Other||22nd International Conference on Solid State Devices and Materials|
|Period||90/8/22 → 90/8/24|
ASJC Scopus subject areas