Two-dimensional device simulation for poly-silicon thin-film transistor

So Yamada, Shin Yokoyama, Mitsumasa Koyanagi

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

An accurate device simulator for polycrystalline-silicon thin-film transistors is developed. In this simulator, the influences of grain-boundaries (GBs) are incorporated into the mobility model, and the basic semiconductor equations are solved combining with the carrier generation/recombination model. As a result, it becomes possible to quantitatively analyze the influence of the GBs on the kink effect and the avalanche breakdown phenomenon, and the influences of the GB trap density and the grain size on the device characteristics.

Original languageEnglish
Pages1003-1006
Number of pages4
Publication statusPublished - 1990 Dec 1
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90/8/2290/8/24

ASJC Scopus subject areas

  • Engineering(all)

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