Two-Dimensional Anderson Localization in Black Phosphorus Crystals Prepared by Bismuth-Flux Method

Mamoru Baba, Fukunori Izumida, Yuji Takeda, Kiyotaka Shibata, Akira Morita, Yoji Koike, Tetsuro Fukase

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The temperature and magnetic field dependence of the electrical resistivity of black phosphorus single crystals prepared by the bismuth-flux method was measured down to 0.5 K in temperature and up to 6 T in magnetic field. While a typical semiconducting behavior of p-type conduction has been observed above about 10 K, the log T-like dependence of the conductivity and the log B dependence of the negative magnetoresistance have been found below 10 K. Results of the field dependence of the magnetoresistance are in good agreement with the theory of the two-dimensional Anderson localization. The whole results are understood by a model that the 3D hole conduction process in the high temperature region is replaced at about 10 K by a 2D electron gas confined near the surface.

Original languageEnglish
Pages (from-to)3777-3783
Number of pages7
Journaljournal of the physical society of japan
Issue number11
Publication statusPublished - 1991 Nov


  • Anderson localization
  • black phosphorus
  • electrical conductivity
  • elemental semiconductor
  • inversion layer
  • layered material
  • magnetoresistance
  • two-dimensional localization

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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