@inproceedings{a0ecf134e1dc40e695051f584bd400ad,
title = "Two-dimensional analytical modelling of subthreshold region in fully-depleted SOI MOSFETs",
abstract = "New two-dimensional analytical models for the potential distribution and the subthreshold factor in SOI MOSFET are developed and extensive study of 0.1 ¿m SOI MOSFET design is performed. It is shown that the ultra-thin SOI films and high doping concentrations are necessary to obtain high subthreshold slopes in SOI MOSFETs.",
author = "S. Pidin and Mitsumasa Koyanagi",
year = "1996",
month = jan,
day = "1",
language = "English",
isbn = "9782863321966",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "479--482",
editor = "Massimo Rudan and Giorgio Baccarani",
booktitle = "ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference",
note = "26th European Solid State Device Research Conference, ESSDERC 1996 ; Conference date: 09-09-1996 Through 11-09-1996",
}