Two-dimensional analytical modelling of subthreshold region in fully-depleted SOI MOSFETs

S. Pidin, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

New two-dimensional analytical models for the potential distribution and the subthreshold factor in SOI MOSFET are developed and extensive study of 0.1 ¿m SOI MOSFET design is performed. It is shown that the ultra-thin SOI films and high doping concentrations are necessary to obtain high subthreshold slopes in SOI MOSFETs.

Original languageEnglish
Title of host publicationESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
EditorsMassimo Rudan, Giorgio Baccarani
PublisherIEEE Computer Society
Pages479-482
Number of pages4
ISBN (Electronic)286332196X
ISBN (Print)9782863321966
Publication statusPublished - 1996 Jan 1
Event26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy
Duration: 1996 Sep 91996 Sep 11

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other26th European Solid State Device Research Conference, ESSDERC 1996
CountryItaly
CityBologna
Period96/9/996/9/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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