TY - GEN
T1 - Two-dimensional analytical model of subthreshold current in fully-depleted SOI MOSFETs
AU - Pidin, S.
AU - Kurino, H.
AU - Koyanagi, M.
PY - 1997/1/1
Y1 - 1997/1/1
N2 - A new two-dimensional model for subthreshold current in fully-depleted SQI MOSFETs is developed. The model is based on analytical approximation of two-dimensional Poissons s equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron 501 M0SFETs.
AB - A new two-dimensional model for subthreshold current in fully-depleted SQI MOSFETs is developed. The model is based on analytical approximation of two-dimensional Poissons s equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron 501 M0SFETs.
UR - http://www.scopus.com/inward/record.url?scp=84907486420&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84907486420&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.1997.194519
DO - 10.1109/ESSDERC.1997.194519
M3 - Conference contribution
AN - SCOPUS:84907486420
T3 - European Solid-State Device Research Conference
SP - 676
EP - 679
BT - European Solid-State Device Research Conference
A2 - Grunbacher, H.
PB - IEEE Computer Society
T2 - 27th European Solid-State Device Research Conference, ESSDERC 1997
Y2 - 22 September 1997 through 24 September 1997
ER -