Two-dimensional analytical model of subthreshold current in fully-depleted SOI MOSFETs

S. Pidin, H. Kurino, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new two-dimensional model for subthreshold current in fully-depleted SQI MOSFETs is developed. The model is based on analytical approximation of two-dimensional Poissons s equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron 501 M0SFETs.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsH. Grunbacher
PublisherIEEE Computer Society
Pages676-679
Number of pages4
ISBN (Electronic)2863322214
DOIs
Publication statusPublished - 1997 Jan 1
Event27th European Solid-State Device Research Conference, ESSDERC 1997 - Stuttgart, Germany
Duration: 1997 Sep 221997 Sep 24

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other27th European Solid-State Device Research Conference, ESSDERC 1997
CountryGermany
CityStuttgart
Period97/9/2297/9/24

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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    Pidin, S., Kurino, H., & Koyanagi, M. (1997). Two-dimensional analytical model of subthreshold current in fully-depleted SOI MOSFETs. In H. Grunbacher (Ed.), European Solid-State Device Research Conference (pp. 676-679). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.1997.194519