Abstract
A new two-dimensional model for subthreshold current in fully-depleted SQI MOSFETs is developed. The model is based on analytical approximation of two-dimensional Poissons s equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron 501 M0SFETs.
| Original language | English |
|---|---|
| Title of host publication | European Solid-State Device Research Conference |
| Editors | H. Grunbacher |
| Publisher | IEEE Computer Society |
| Pages | 676-679 |
| Number of pages | 4 |
| ISBN (Electronic) | 2863322214 |
| DOIs | |
| Publication status | Published - 1997 Jan 1 |
| Event | 27th European Solid-State Device Research Conference, ESSDERC 1997 - Stuttgart, Germany Duration: 1997 Sep 22 → 1997 Sep 24 |
Publication series
| Name | European Solid-State Device Research Conference |
|---|---|
| ISSN (Print) | 1930-8876 |
Other
| Other | 27th European Solid-State Device Research Conference, ESSDERC 1997 |
|---|---|
| Country | Germany |
| City | Stuttgart |
| Period | 97/9/22 → 97/9/24 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality
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Cite this
Pidin, S., Kurino, H., & Koyanagi, M. (1997). Two-dimensional analytical model of subthreshold current in fully-depleted SOI MOSFETs. In H. Grunbacher (Ed.), European Solid-State Device Research Conference (pp. 676-679). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.1997.194519