@inproceedings{9e2f6c085e8e42ff80d83e37c44c11ab,
title = "Two-dimensional analysis of carrier distribution in phosphorus-implanted emitter and phosphorus-diffused emitter using super-higher-order scanning nonlinear dielectric microscopy",
abstract = "Two-dimensional carrier distributions in phosphorus (P)-implanted emitter and P-diffused emitter were analyzed using super-higher-order scanning nonlinear dielectric microscopy (SHO-SNDM). The carrier distribution was clearly visualized and quantified using calibration sample. P-type, n-type and depletion layer was discriminated from local capacitance- voltage characterization obtained from SHO-SNDM measurement. The n-type region and depletion layer distribution depended on the surface texture. The position of p-n junction was estimated near the p-type region in depletion layer. The n-type region and depletion layer distribution was thicker in P- implanted emitter than P-diffused emitter.",
keywords = "Capacitance, Diffusion process, Doping, Ion implantation, Scanning nonlinear dielectric microscopy, Scanning probe microscopy, Semiconductor, Silicon, Surface texture",
author = "Kotaro Hirose and Katsuto Tanahashi and Hidetaka Takato and Norimichi Chinone and Yasuo Cho",
note = "Funding Information: This research was partially supported by a Grant-in-Aid for Scientific Research S (No. 23226008) from the Japan Society for Promotion of Science. Publisher Copyright: {\textcopyright} 2017 IEEE. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",
year = "2017",
doi = "10.1109/PVSC.2017.8366879",
language = "English",
series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--4",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
}
