Two-dimensional analysis of carrier distribution in phosphorus-implanted emitter and phosphorus-diffused emitter using super-higher-order scanning nonlinear dielectric microscopy

Kotaro Hirose, Katsuto Tanahashi, Hidetaka Takato, Norimichi Chinone, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Two-dimensional carrier distributions in phosphorus (P)-implanted emitter and P-diffused emitter were analyzed using super-higher-order scanning nonlinear dielectric microscopy (SHO-SNDM). The carrier distribution was clearly visualized and quantified using calibration sample. P-type, n-type and depletion layer was discriminated from local capacitance-voltage characterization obtained from SHO-SNDM measurement. The n-type region and depletion layer distribution depended on the surface texture. The position of p-n junction was estimated near the p-type region in depletion layer. The n-type region and depletion layer distribution was thicker in P-implanted emitter than P-diffused emitter.

Original languageEnglish
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3671-3674
Number of pages4
ISBN (Electronic)9781509027248
DOIs
Publication statusPublished - 2016 Nov 18
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: 2016 Jun 52016 Jun 10

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/TerritoryUnited States
CityPortland
Period16/6/516/6/10

Keywords

  • capacitance
  • diffusion process
  • doping
  • ion implantation
  • scanning nonlinear dielectric microscopy
  • scanning probe microscopy
  • semiconductor
  • silicon
  • surface texture

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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