Two different types of antiferromagnetic couplings and magnetoresistances in Fe/Si multilayers

Koichiro Inomata, Keiichiro Yusu, Yoshiaki Saito

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Two different types of antiferromagnetic (AF) interlayer couplings as a function of Si layer thickness, tsu have been observed in a series of (2.6 nm Fe/tSi nm Si)22 multilayers. One of the AF-couplings was observed at around tSi = 1.2 nm at room temperature (RT) and changed to ferromagnetic (F) coupling at a low temperature. The other AF coupling was observed for tSi thicker than 1.5 nm with a minimum around tSi = 2.5 nm, and was almost tempera­ture independent. Negative magnetoresistance has been observed in the multilayers with the AF coupling, and has similar temperature dependence as that of the AF coupling.

Original languageEnglish
Pages (from-to)L1670-L1672
JournalJapanese journal of applied physics
Volume33
Issue number12 A
DOIs
Publication statusPublished - 1994 Dec
Externally publishedYes

Keywords

  • Interlayer coupling
  • Iron
  • Magnetoresistance
  • Multilayers
  • Semiconductor
  • Silicon
  • Temperature dependence

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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