Twin boundary formation at a grain-boundary groove during the directional solidification of InSb

Keiji Shiga, Atsuko Takahashi, Lu Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

Research output: Contribution to journalArticlepeer-review

Abstract

We investigated twin boundary formation during directional solidification of the compound semiconductor InSb. We directly observed a groove formed at the junction of a solid–liquid interface and a Σ9 grain-boundary by optical microscopy. When the depth of the grain-boundary groove reached about 100 μm, rapid growth occurred to fill the groove. We found that two facet planes of the grain-boundary groove became twin boundary planes. Calculations of the change in free energy associated with nucleation at the grain-boundary groove indicates that the preferential twin nucleation occurs at the bottom of the groove, consistent with the direct observations in this study.

Original languageEnglish
Article number126403
JournalJournal of Crystal Growth
Volume577
DOIs
Publication statusPublished - 2022 Jan 1

Keywords

  • A1. Defects
  • A1. Directional solidification
  • A1. Nucleation
  • A1. Optical microscopy
  • A2. Growth from melt
  • B2. Semiconducting indium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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