Tunnelling and transfer between 1D and 2D electrons in adjusted quantum wells with thin barrier

K. J. Friedland, Y. Hirayama, T. Fujisawa, T. Saku, S. Tarucha

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


By the technique of in situ focused ion-beam implantation in an underlying doping layer followed by molecular beam epitaxy overgrowth of a double quantum-well we have fabricated adjusted one-dimensional and two-dimensional electrons with very thin barrier between them. Each of the electron systems could be contacted separately. The tunnelling resistance between electron layers increases at high in-plane magnetic fields. With magnetic fields perpendicular to the wire we can investigate the coupling of lower one-dimensional subband while in the parallel direction higher subband states hybridise. In the first case, we observed clear resonance in the tunnelling and electron transfer.

Original languageEnglish
Pages (from-to)31-33
Number of pages3
JournalPhysica B: Condensed Matter
Issue number1-4
Publication statusPublished - 1996 Sept
Externally publishedYes


  • Electron coupling
  • Focused ion beam
  • In situ process
  • Low dimensional structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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