Abstract
The l-V characteristics of ultrathin GaAs n++-p++-n++ barrier structures with a 45 Å thick p++ layer grown by molecular layer epitaxy (MLE) have been measured at room temperature and 77 K. The tunneling probability for this structure has been calculated as a function of effective tunneling width. It was found that good agreement between experiment and calculation is obtained when the effective tunneling width is assumed to be 75 A, which is much smaller than the depletion width about 190 A measured by C-V method. This fact indicates that the depletion width approximation cannot be used to measure the exact tunneling width for ultrathin barrier devices.
Original language | English |
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Pages (from-to) | 2551-2554 |
Number of pages | 4 |
Journal | IEEE Transactions on Electron Devices |
Volume | 45 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1998 Dec 1 |
Keywords
- Effective tunnelling width
- Molecular layer epitaxy
- Ultrathin barrier
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering