Tunneling through ultrathin GaAs n++-p++-n++ barrier grown by molecular layer epitaxy

Yong Xun Liu, Piotr Plotka, Ken Suto, Yutaka Oyama, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The l-V characteristics of ultrathin GaAs n++-p++-n++ barrier structures with a 45 Å thick p++ layer grown by molecular layer epitaxy (MLE) have been measured at room temperature and 77 K. The tunneling probability for this structure has been calculated as a function of effective tunneling width. It was found that good agreement between experiment and calculation is obtained when the effective tunneling width is assumed to be 75 A, which is much smaller than the depletion width about 190 A measured by C-V method. This fact indicates that the depletion width approximation cannot be used to measure the exact tunneling width for ultrathin barrier devices.

Original languageEnglish
Pages (from-to)2551-2554
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number12
Publication statusPublished - 1998
Externally publishedYes


  • Effective tunnelling width
  • Molecular layer epitaxy
  • Ultrathin barrier

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Tunneling through ultrathin GaAs n++-p++-n++ barrier grown by molecular layer epitaxy'. Together they form a unique fingerprint.

Cite this