Abstract
Tunneling spectroscopy measurements of magnetic tunneling junctions including two different barrier layers were performed. Intense dips at bias voltages of ±0.3 V were observed in second derivative conductance spectra only for a magnetic tunneling junction with a MgO barrier. It was concluded that the electronic structure of the MgO barrier has significant influence on the tunneling process of electrons through magnetic tunnel junctions.
Original language | English |
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Article number | 08T309 |
Journal | Journal of Applied Physics |
Volume | 99 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2006 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)