Tunneling spectroscopy measurements of magnetic tunneling junctions including two different barrier layers were performed. Intense dips at bias voltages of ±0.3 V were observed in second derivative conductance spectra only for a magnetic tunneling junction with a MgO barrier. It was concluded that the electronic structure of the MgO barrier has significant influence on the tunneling process of electrons through magnetic tunnel junctions.
ASJC Scopus subject areas
- Physics and Astronomy(all)