TY - JOUR
T1 - Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier
AU - Chiba, D.
AU - Matsukura, F.
AU - Ohno, H.
N1 - Funding Information:
The authors thank Y. Sato, K. Ohtani, and Y. Ohno for useful discussions. This work was supported by IT Program of Research Revolution 2002 (RR2002) from MEXT and Grant-in-Aids for Scientific Research from JSPS and MEXT, and by Research Fellowship for Young Scientists from JSPS.
PY - 2004/3
Y1 - 2004/3
N2 - We have investigated the properties of tunneling magnetoresistance (TMR) of (Ga,Mn)As trilayer structures with a GaAs intermediary barrier layer. TMR ratio of 290% is observed at 0.39 K around zero applied bias voltage. The bias dependence of TMR ratio as well as the temperature-dependent anisotropic behavior are presented.
AB - We have investigated the properties of tunneling magnetoresistance (TMR) of (Ga,Mn)As trilayer structures with a GaAs intermediary barrier layer. TMR ratio of 290% is observed at 0.39 K around zero applied bias voltage. The bias dependence of TMR ratio as well as the temperature-dependent anisotropic behavior are presented.
KW - (GaMn)As
KW - Spin polarization
KW - Tunneling magnetoresistance
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U2 - 10.1016/j.physe.2003.11.172
DO - 10.1016/j.physe.2003.11.172
M3 - Conference article
AN - SCOPUS:1642325465
VL - 21
SP - 966
EP - 969
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2-4
T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)
Y2 - 14 July 2003 through 18 July 2003
ER -