Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier

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Abstract

We have investigated the properties of tunneling magnetoresistance (TMR) of (Ga,Mn)As trilayer structures with a GaAs intermediary barrier layer. TMR ratio of 290% is observed at 0.39 K around zero applied bias voltage. The bias dependence of TMR ratio as well as the temperature-dependent anisotropic behavior are presented.

Original languageEnglish
Pages (from-to)966-969
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume21
Issue number2-4
DOIs
Publication statusPublished - 2004 Mar 1
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 2003 Jul 142003 Jul 18

Keywords

  • (GaMn)As
  • Spin polarization
  • Tunneling magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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