Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier

D. Chiba; F. Matsukura; H. Ohno

doi:10.1016/j.physe.2003.11.172

Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier

D. Chiba, F. Matsukura, H. Ohno

Research output: Contribution to journal › Conference article

109 Citations (Scopus)

Abstract

We have investigated the properties of tunneling magnetoresistance (TMR) of (Ga,Mn)As trilayer structures with a GaAs intermediary barrier layer. TMR ratio of 290% is observed at 0.39 K around zero applied bias voltage. The bias dependence of TMR ratio as well as the temperature-dependent anisotropic behavior are presented.

Original language	English
Pages (from-to)	966-969
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.172
Publication status	Published - 2004 Mar 1
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18

Keywords

(GaMn)As
Spin polarization
Tunneling magnetoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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Chiba, D., Matsukura, F., & Ohno, H. (2004). Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier. Physica E: Low-Dimensional Systems and Nanostructures, 21(2-4), 966-969. https://doi.org/10.1016/j.physe.2003.11.172

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AU - Chiba, D.

AU - Matsukura, F.

AU - Ohno, H.

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N2 - We have investigated the properties of tunneling magnetoresistance (TMR) of (Ga,Mn)As trilayer structures with a GaAs intermediary barrier layer. TMR ratio of 290% is observed at 0.39 K around zero applied bias voltage. The bias dependence of TMR ratio as well as the temperature-dependent anisotropic behavior are presented.

AB - We have investigated the properties of tunneling magnetoresistance (TMR) of (Ga,Mn)As trilayer structures with a GaAs intermediary barrier layer. TMR ratio of 290% is observed at 0.39 K around zero applied bias voltage. The bias dependence of TMR ratio as well as the temperature-dependent anisotropic behavior are presented.

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KW - Spin polarization

KW - Tunneling magnetoresistance

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