Tunneling magnetoresistance effect in MnGa based perpendicular magnetic tunnel junction with Fe/Co interlayer

Qinli Ma, Shigemi Mizukami, Takahide Kubota, Xianmin Zhang, Atsushi Sugihara, Hiroshi Naganuma, Mikihiko Oogane, Yasuo Ando, Terunobu Miyazaki

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In order to enhance the magnetoresistance (MR) of perpendicular magnetic tunnel junctions (pMTJs) based on MnGa alloys, a single ferromagnetic layer such as Fe and Co was previously inserted between MnGa and MgO barrier. In this study, to further enhance the spin-filter effect, we introduced a Fe/Co bilayer as an interlayer in the MnGa/MgO interface. Compared to the single Co interlayer, an apparent MR ratio enhancement was obtained when Fe layer thickness was around 0.3 nm for pMTJs with MnGa compositions of Mn 57Ga43, Mn62Ga38, and Mn 70Ga30, and the maximum MR ratio reaches 50% at room temperature. In addition, inverted magnetoresistance loops were observed due to the antiparallel alignment of the magnetic moments of Co and MnGa layers separated by the thin Fe layer.

Original languageEnglish
Article number163913
JournalJournal of Applied Physics
Volume114
Issue number16
DOIs
Publication statusPublished - 2013 Oct 28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Tunneling magnetoresistance effect in MnGa based perpendicular magnetic tunnel junction with Fe/Co interlayer'. Together they form a unique fingerprint.

Cite this