Temperature dependence of current-voltage (I-V) characteristics of quantum-confined GaAs ultra-shallow sidewall p+n+ tunnel junctions has been investigated. The sidewall tunnel junctions with junction depths ranging from 5 nm to 50 nm were achieved by the combination of intermittent injection of TEG/AsH3 in an ultra high vacuum and a wet etching process of the GaAs growth layer. From the I-V results, abrupt negative differential resistances (NDR) were observed, which relate to direct/indirect tunneling and subband formation. The change in the number instances of NDR and their voltage positions also depended on the junction depth. Mechanisms of tunneling in the present sidewall tunnel junction will be discussed from the point of the sub-band formation in conduction bands.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - 2006 May 8|
|Event||32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany|
Duration: 2005 Sep 18 → 2005 Sep 22
ASJC Scopus subject areas
- Condensed Matter Physics