Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions

Takeo Ohno; Yutaka Oyama; Jun Ichi Nishizawa

doi:10.1002/pssc.200564135

Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions

Takeo Ohno, Yutaka Oyama, Jun Ichi Nishizawa

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Temperature dependence of current-voltage (I-V) characteristics of quantum-confined GaAs ultra-shallow sidewall p⁺n⁺ tunnel junctions has been investigated. The sidewall tunnel junctions with junction depths ranging from 5 nm to 50 nm were achieved by the combination of intermittent injection of TEG/AsH₃ in an ultra high vacuum and a wet etching process of the GaAs growth layer. From the I-V results, abrupt negative differential resistances (NDR) were observed, which relate to direct/indirect tunneling and subband formation. The change in the number instances of NDR and their voltage positions also depended on the junction depth. Mechanisms of tunneling in the present sidewall tunnel junction will be discussed from the point of the sub-band formation in conduction bands.

Original language	English
Pages (from-to)	635-638
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	3
Issue number	3
DOIs	https://doi.org/10.1002/pssc.200564135
Publication status	Published - 2006 May 8
Event	32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany Duration: 2005 Sep 18 → 2005 Sep 22

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200564135

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title = "Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions",

abstract = "Temperature dependence of current-voltage (I-V) characteristics of quantum-confined GaAs ultra-shallow sidewall p+n+ tunnel junctions has been investigated. The sidewall tunnel junctions with junction depths ranging from 5 nm to 50 nm were achieved by the combination of intermittent injection of TEG/AsH3 in an ultra high vacuum and a wet etching process of the GaAs growth layer. From the I-V results, abrupt negative differential resistances (NDR) were observed, which relate to direct/indirect tunneling and subband formation. The change in the number instances of NDR and their voltage positions also depended on the junction depth. Mechanisms of tunneling in the present sidewall tunnel junction will be discussed from the point of the sub-band formation in conduction bands.",

author = "Takeo Ohno and Yutaka Oyama and Nishizawa, {Jun Ichi}",

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note = "32nd International Symposium on Compound Semiconductors, ISCS-2005 ; Conference date: 18-09-2005 Through 22-09-2005",

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T1 - Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions

AU - Ohno, Takeo

AU - Oyama, Yutaka

AU - Nishizawa, Jun Ichi

PY - 2006/5/8

Y1 - 2006/5/8

N2 - Temperature dependence of current-voltage (I-V) characteristics of quantum-confined GaAs ultra-shallow sidewall p+n+ tunnel junctions has been investigated. The sidewall tunnel junctions with junction depths ranging from 5 nm to 50 nm were achieved by the combination of intermittent injection of TEG/AsH3 in an ultra high vacuum and a wet etching process of the GaAs growth layer. From the I-V results, abrupt negative differential resistances (NDR) were observed, which relate to direct/indirect tunneling and subband formation. The change in the number instances of NDR and their voltage positions also depended on the junction depth. Mechanisms of tunneling in the present sidewall tunnel junction will be discussed from the point of the sub-band formation in conduction bands.

AB - Temperature dependence of current-voltage (I-V) characteristics of quantum-confined GaAs ultra-shallow sidewall p+n+ tunnel junctions has been investigated. The sidewall tunnel junctions with junction depths ranging from 5 nm to 50 nm were achieved by the combination of intermittent injection of TEG/AsH3 in an ultra high vacuum and a wet etching process of the GaAs growth layer. From the I-V results, abrupt negative differential resistances (NDR) were observed, which relate to direct/indirect tunneling and subband formation. The change in the number instances of NDR and their voltage positions also depended on the junction depth. Mechanisms of tunneling in the present sidewall tunnel junction will be discussed from the point of the sub-band formation in conduction bands.

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JO - Physica Status Solidi C: Conferences

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T2 - 32nd International Symposium on Compound Semiconductors, ISCS-2005

Y2 - 18 September 2005 through 22 September 2005

ER -

Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions

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