Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions

Takeo Ohno, Yutaka Oyama, Jun Ichi Nishizawa

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Temperature dependence of current-voltage (I-V) characteristics of quantum-confined GaAs ultra-shallow sidewall p+n+ tunnel junctions has been investigated. The sidewall tunnel junctions with junction depths ranging from 5 nm to 50 nm were achieved by the combination of intermittent injection of TEG/AsH3 in an ultra high vacuum and a wet etching process of the GaAs growth layer. From the I-V results, abrupt negative differential resistances (NDR) were observed, which relate to direct/indirect tunneling and subband formation. The change in the number instances of NDR and their voltage positions also depended on the junction depth. Mechanisms of tunneling in the present sidewall tunnel junction will be discussed from the point of the sub-band formation in conduction bands.

Original languageEnglish
Pages (from-to)635-638
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume3
Issue number3
DOIs
Publication statusPublished - 2006 May 8
Event32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany
Duration: 2005 Sep 182005 Sep 22

ASJC Scopus subject areas

  • Condensed Matter Physics

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