Tunneling electron induced bromine hopping on Si(100)-(2 × 1)

Koji S. Nakayama, E. Graugnard, J. H. Weaver

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Scanning tunneling microscopy (STM) offers a way to visualize individual atoms and molecules on surfaces. Recently, attention has focused on STM-based manipulation of surface moieties and on their electronic properties in metal junctions. This paper shows that electrons tunneling into the surface under normal scanning conditions induce migration of covalently bonded Br atoms on Si(100)-(2X1).

Original languageEnglish
Article number266106
Pages (from-to)266106/1-266106/4
JournalPhysical review letters
Volume89
Issue number26
Publication statusPublished - 2002 Dec 23

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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