Sidewall n+p+n+ and p+n+in+ structures were fabricated by area-selective molecular layer epitaxy of GaAs, and electrical evaluation was carried out on the structures by J -V measurement. In the n+p+n+ structure, tunneling current decreased as the thickness of the p+ layer increased. An Esaki peak was also observed when the p+ layer was thicker than the depletion layer. The J -V characteristic of the p+n+in+ structure depended on the thickness of the n+ layer, and its curve at the reverse bias shifted to the low voltage side when the n+ layer became thick.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2010 Oct 1|
- Electrical characteristics
- P-n-in junctions
ASJC Scopus subject areas
- Condensed Matter Physics