Tunneling current of GaAs ultrashallow sidewall n+p+n+ and p+n+in+ structure prepared by area-selective molecular layer epitaxy

Takeo Ohno, Yutaka Oyama

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1 Citation (Scopus)

Abstract

Sidewall n+p+n+ and p+n+in+ structures were fabricated by area-selective molecular layer epitaxy of GaAs, and electrical evaluation was carried out on the structures by J -V measurement. In the n+p+n+ structure, tunneling current decreased as the thickness of the p+ layer increased. An Esaki peak was also observed when the p+ layer was thicker than the depletion layer. The J -V characteristic of the p+n+in+ structure depended on the thickness of the n+ layer, and its curve at the reverse bias shifted to the low voltage side when the n+ layer became thick.

Original languageEnglish
Pages (from-to)2474-2477
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume7
Issue number10
DOIs
Publication statusPublished - 2010 Oct 1

Keywords

  • Electrical characteristics
  • GaAs
  • MBE
  • N-p-n
  • P-n-in junctions
  • Tunneling

ASJC Scopus subject areas

  • Condensed Matter Physics

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