Tunneling current of GaAs ultrashallow sidewall n⁺p⁺n⁺ and p⁺n⁺in⁺ structure prepared by area-selective molecular layer epitaxy

Sidewall n⁺p⁺n⁺ and p⁺n⁺in⁺ structures were fabricated by area-selective molecular layer epitaxy of GaAs, and electrical evaluation was carried out on the structures by J -V measurement. In the n⁺p⁺n⁺ structure, tunneling current decreased as the thickness of the p⁺ layer increased. An Esaki peak was also observed when the p⁺ layer was thicker than the depletion layer. The J -V characteristic of the p⁺n⁺in⁺ structure depended on the thickness of the n⁺ layer, and its curve at the reverse bias shifted to the low voltage side when the n⁺ layer became thick.