Tunneling current-induced butterfly-shaped domains and magnetization switching in DBMTJs

S. F. Zhao, J. Zhao, Z. M. Zeng, X. F. Han, A. C.C. Yu, Y. Ando, T. Miyazaki

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Double barrier magnetic tunnel junctions (DBMTJs) with the layer architecture of Ta (5 nm)/Cu (20 nm)/Ni79Fe21 (10 nm)/Ir22Mn78 (12 nm)/Co75Fe25 (4 nm)/Al (0.9 nm)-oxide/Ni79Fe21(3 nm)/Al (0.9 nm)-oxide/Co75Fe25(4 nm)/Ir22Mn78 (12 nm)/Py(10 nm)/Cu(30 nm)/Ta(5 nm) were mircofabricated. At room temperature, TMR ratio of 18.7% and 28.4%, resistance-area products(RS) of around 10.3 and 12.7 kΩμm2 and coercivity Hc of 17.5 and 2.0 Oe, were obtained for the DBMTJ at the as-deposited state and the after annealing state respectively. The micromagnetics simulations show that the dynamic butterfly-shaped domains and magnetization switching may occur in the free layer when a tunneling current of the order of 1 to 20 mA passes though the DBMTJ. It decreases the magnetization in the free layer, which may be the one of the reasons of the low TMR ratio observed in the DBMTJ.

Original languageEnglish
Pages (from-to)2636-2638
Number of pages3
JournalIEEE Transactions on Magnetics
Volume41
Issue number10
DOIs
Publication statusPublished - 2005 Oct

Keywords

  • Domain structure
  • Magnetic tunnel junctions
  • Micromagnetics
  • Tunneling current-induced

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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