Abstract
The copper oxide superconductors are considered to have stacking structures of strongly and weakly super-conducting layers. Using this model, the tunneling conductance in a junction of the superconductor and a normal metal is calculated as a function of bias voltage. The calculation predicts that a characteristic fine structure appears inside the superconducting gap in the tuneling spectrum at low temperatures.
| Original language | English |
|---|---|
| Pages (from-to) | 161-166 |
| Number of pages | 6 |
| Journal | Zeitschrift für Physik B Condensed Matter |
| Volume | 80 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1990 Jun 1 |
ASJC Scopus subject areas
- Condensed Matter Physics
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Cite this
Tachiki, M., Takahashi, S., Steglich, F., & Adrian, H. (1990). Tunneling conductance in layered oxide superconductors. Zeitschrift für Physik B Condensed Matter, 80(2), 161-166. https://doi.org/10.1007/BF01357497