Tunneling between parallel quantum wires

M. Yamamoto, Y. Tokura, Y. Hirayama, M. Stopa, K. Ono, S. Tarucha

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We measure electron tunneling between parallel coupled two split-gate quantum wires to investigate the microscopic electronic properties of one-dimensional (1D) electron systems. The differential tunneling conductance dI/dV has peaks when the subband bottoms align between the wires. By tracing these peaks as a function of voltage V between the wires and gate voltages, we characterize the 1D subband structures and inter-subband interactions. We also observe charging and filling of the 1D energy bands.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages925-926
Number of pages2
DOIs
Publication statusPublished - 2005 Jun 30
Externally publishedYes
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 2004 Jul 262004 Jul 30

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period04/7/2604/7/30

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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