Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe/spinel MgAl2O4/Fe (001) junctions

Hiroaki Sukegawa, Huixin Xiu, Tadakatsu Ohkubo, Takao Furubayashi, Tomohiko Niizeki, Wenhong Wang, Shinya Kasai, Seiji Mitani, Koichiro Inomata, Kazuhiro Hono

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    78 Citations (Scopus)

    Abstract

    We fabricated fully epitaxial Fe/MgAl2O4/Fe (001) magnetic tunnel junctions using plasma oxidation of an Mg/Al bilayer. The MgAl2O4 showed a (001)-oriented spinel-type structure, and there were few misfit dislocations at the interfaces between the MgAl 2O4 and the two Fe layers due to a small lattice mismatch (∼1%). Tunnel magnetoresistance (TMR) ratios up to 117% (165%) were obtained at room temperature (15 K). The bias voltage for one-half of the zero-bias TMR ratio (Vhalf) was relatively large, ranging from 1.0 to 1.3 V at room temperature, which is attributed to the small misfit dislocation density.

    Original languageEnglish
    Article number212505
    JournalApplied Physics Letters
    Volume96
    Issue number21
    DOIs
    Publication statusPublished - 2010 May 24

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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