Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe/spinel MgAl2O4/Fe (001) junctions

Hiroaki Sukegawa; Huixin Xiu; Tadakatsu Ohkubo; Takao Furubayashi; Tomohiko Niizeki; Wenhong Wang; Shinya Kasai; Seiji Mitani; Koichiro Inomata; Kazuhiro Hono

doi:10.1063/1.3441409

Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe/spinel MgAl₂O₄/Fe (001) junctions

Hiroaki Sukegawa, Huixin Xiu, Tadakatsu Ohkubo, Takao Furubayashi, Tomohiko Niizeki, Wenhong Wang, Shinya Kasai, Seiji Mitani, Koichiro Inomata, Kazuhiro Hono

Research output: Contribution to journal › Article › peer-review

78 Citations (Scopus)

Abstract

We fabricated fully epitaxial Fe/MgAl₂O₄/Fe (001) magnetic tunnel junctions using plasma oxidation of an Mg/Al bilayer. The MgAl₂O₄ showed a (001)-oriented spinel-type structure, and there were few misfit dislocations at the interfaces between the MgAl ₂O₄ and the two Fe layers due to a small lattice mismatch (∼1%). Tunnel magnetoresistance (TMR) ratios up to 117% (165%) were obtained at room temperature (15 K). The bias voltage for one-half of the zero-bias TMR ratio (Vhalf) was relatively large, ranging from 1.0 to 1.3 V at room temperature, which is attributed to the small misfit dislocation density.

Original language	English
Article number	212505
Journal	Applied Physics Letters
Volume	96
Issue number	21
DOIs	https://doi.org/10.1063/1.3441409
Publication status	Published - 2010 May 24

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe/spinel MgAl₂O₄/Fe (001) junctions. / Sukegawa, Hiroaki; Xiu, Huixin; Ohkubo, Tadakatsu; Furubayashi, Takao; Niizeki, Tomohiko; Wang, Wenhong; Kasai, Shinya; Mitani, Seiji; Inomata, Koichiro; Hono, Kazuhiro.

In: Applied Physics Letters, Vol. 96, No. 21, 212505, 24.05.2010.

Research output: Contribution to journal › Article › peer-review

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title = "Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe/spinel MgAl2O4/Fe (001) junctions",

abstract = "We fabricated fully epitaxial Fe/MgAl2O4/Fe (001) magnetic tunnel junctions using plasma oxidation of an Mg/Al bilayer. The MgAl2O4 showed a (001)-oriented spinel-type structure, and there were few misfit dislocations at the interfaces between the MgAl 2O4 and the two Fe layers due to a small lattice mismatch (∼1%). Tunnel magnetoresistance (TMR) ratios up to 117% (165%) were obtained at room temperature (15 K). The bias voltage for one-half of the zero-bias TMR ratio (Vhalf) was relatively large, ranging from 1.0 to 1.3 V at room temperature, which is attributed to the small misfit dislocation density.",

author = "Hiroaki Sukegawa and Huixin Xiu and Tadakatsu Ohkubo and Takao Furubayashi and Tomohiko Niizeki and Wenhong Wang and Shinya Kasai and Seiji Mitani and Koichiro Inomata and Kazuhiro Hono",

note = "Funding Information: This work was partly supported by a Grant-in-Aid for Young Scientists (B) (Grant No. 20760478) from the Japanese Ministry of Education, Culture, Sports, Science and Technology. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",

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AU - Sukegawa, Hiroaki

AU - Xiu, Huixin

AU - Ohkubo, Tadakatsu

AU - Furubayashi, Takao

AU - Niizeki, Tomohiko

AU - Wang, Wenhong

AU - Kasai, Shinya

AU - Mitani, Seiji

AU - Inomata, Koichiro

AU - Hono, Kazuhiro

N1 - Funding Information: This work was partly supported by a Grant-in-Aid for Young Scientists (B) (Grant No. 20760478) from the Japanese Ministry of Education, Culture, Sports, Science and Technology. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2010/5/24

Y1 - 2010/5/24

N2 - We fabricated fully epitaxial Fe/MgAl2O4/Fe (001) magnetic tunnel junctions using plasma oxidation of an Mg/Al bilayer. The MgAl2O4 showed a (001)-oriented spinel-type structure, and there were few misfit dislocations at the interfaces between the MgAl 2O4 and the two Fe layers due to a small lattice mismatch (∼1%). Tunnel magnetoresistance (TMR) ratios up to 117% (165%) were obtained at room temperature (15 K). The bias voltage for one-half of the zero-bias TMR ratio (Vhalf) was relatively large, ranging from 1.0 to 1.3 V at room temperature, which is attributed to the small misfit dislocation density.

AB - We fabricated fully epitaxial Fe/MgAl2O4/Fe (001) magnetic tunnel junctions using plasma oxidation of an Mg/Al bilayer. The MgAl2O4 showed a (001)-oriented spinel-type structure, and there were few misfit dislocations at the interfaces between the MgAl 2O4 and the two Fe layers due to a small lattice mismatch (∼1%). Tunnel magnetoresistance (TMR) ratios up to 117% (165%) were obtained at room temperature (15 K). The bias voltage for one-half of the zero-bias TMR ratio (Vhalf) was relatively large, ranging from 1.0 to 1.3 V at room temperature, which is attributed to the small misfit dislocation density.

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