Tunnel magnetoresistance properties of double MgO-barrier magnetic tunnel junctions with different free-layer alloy compositions and structures

Huadong Gan, Shoji Ikeda, Michihiko Yamanouchi, Katsuya Miura, Kotaro Mizunuma, Jun Hayakawa, Fumihiro Matsukura, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We investigated tunnel magnetoresistance (TMR) properties in double MgO-barrier magnetic tunnel junctions (DMTJs) with (Co25Fe 75)100-xBx free-layers with x= 15, 20, and 25 (in at.%) sputtered at different power. The TMR ratio of DMTJs increased with sputtering power, which is ascribed to the B composition reduction in the CoFeB free-layer with increasing sputtering power. The X-ray diffraction measurement showed that crystallization into (001)-oriented texture of CoFeB film sandwiched between the two MgO-layers as well as an improvement of (001) orientation of top MgO-barrier are realized. The TMR ratio over 200% was obtained in DMTJs with a (Co25Fe75)85B15 free-layer sputtered at 0.88 and 1.77 W/cm2.

Original languageEnglish
Article number5772191
Pages (from-to)1567-1570
Number of pages4
JournalIEEE Transactions on Magnetics
Volume47
Issue number6 PART 1
DOIs
Publication statusPublished - 2011 Jun

Keywords

  • MgO barrier
  • sputtering condition
  • tunnel magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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