Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures

K. Mizunuma, S. Ikeda, H. Sato, M. Yamanouchi, H. D. Gan, K. Miura, H. Yamamoto, J. Hayakawa, F. Matsukura, H. Ohno

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16 Citations (Scopus)

Abstract

We have investigated the effect of stack structures on tunnel magnetoresistance (TMR) properties in perpendicular anisotropy MgO-based magnetic tunnel junctions (p-MTJs) with CoFe/Pd multilayer and CoFeB insertion. By adopting Ta and Ru cap-layers, the TMR ratios of 113 and 106 are obtained at annealing temperature (Ta) of 325 C, respectively. Particularly, the Ru cap-layer is effective in realizing a TMR ratio of 100 at Ta 350 C. By replacing (Co25Fe75)80B20 with (Co25Fe75)85B15, the TMR ratio increased quickly at low Ta, reaching a maximum of 120 at T a 300 C.

Original languageEnglish
Article number07C711
JournalJournal of Applied Physics
Volume109
Issue number7
DOIs
Publication statusPublished - 2011 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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