We have investigated the effect of stack structures on tunnel magnetoresistance (TMR) properties in perpendicular anisotropy MgO-based magnetic tunnel junctions (p-MTJs) with CoFe/Pd multilayer and CoFeB insertion. By adopting Ta and Ru cap-layers, the TMR ratios of 113 and 106 are obtained at annealing temperature (Ta) of 325 C, respectively. Particularly, the Ru cap-layer is effective in realizing a TMR ratio of 100 at Ta 350 C. By replacing (Co25Fe75)80B20 with (Co25Fe75)85B15, the TMR ratio increased quickly at low Ta, reaching a maximum of 120 at T a 300 C.
ASJC Scopus subject areas
- Physics and Astronomy(all)