Tunnel magnetoresistance of ferromagnetic antiperovskite MnGaN/MgO/CoFeB perpendicular magnetic tunnel junctions

Hwachol Lee; Hiroaki Sukegawa; Jun Liu; Zhenchao Wen; Seiji Mitani; Kazuhiro Hono

doi:10.1109/TMAG.2016.2519283

Tunnel magnetoresistance of ferromagnetic antiperovskite MnGaN/MgO/CoFeB perpendicular magnetic tunnel junctions

Hwachol Lee, Hiroaki Sukegawa, Jun Liu, Zhenchao Wen, Seiji Mitani, Kazuhiro Hono

Center for Spintronics Research Network (CSRN)

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

We report on the tunnel magnetoresistance (TMR) effect of perpendicular magnetic tunnel junctions (p-MTJs) composed of a ferromagnetic antiperovskite MnGaN film with perpendicular magnetic anisotropy. The p-MTJ multilayer stack with MnGaN/Mg/MgO/Fe/CoFeB was used to control the MgO interface conditions by the Mg and Fe insertion layers. The Mg insertion under the MgO barrier enhanced the perpendicular anisotropy of the top Fe/CoFeB layers with post-annealing process, and thus nearly perfect perpendicular magnetization was realized. A perpendicular TMR ratio up to 3.7% ∼ 3.8 % was obtained at room temperature. The obtained low TMR ratio is mainly attributed to the imperfect MgO barrier, which includes many lattice-misfit dislocations at the MnGaN/MgO interface due to the large lattice mismatch of 8%. This paper suggests that improving the interface state and reducing the lattice mismatch will be required to observe a higher perpendicular TMR ratio using an MnGaN electrode.

Original language	English
Article number	7390074
Journal	IEEE Transactions on Magnetics
Volume	52
Issue number	7
DOIs	https://doi.org/10.1109/TMAG.2016.2519283
Publication status	Published - 2016 Jul

Keywords

Antiperovskite
MnGaN
Perpendicular magnetic anisotropy
tunnel magnetoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Lee, H., Sukegawa, H., Liu, J., Wen, Z., Mitani, S., & Hono, K. (2016). Tunnel magnetoresistance of ferromagnetic antiperovskite MnGaN/MgO/CoFeB perpendicular magnetic tunnel junctions. IEEE Transactions on Magnetics, 52(7), [7390074]. https://doi.org/10.1109/TMAG.2016.2519283

@article{e996001b8c2b424e8202162bb16267a9,

title = "Tunnel magnetoresistance of ferromagnetic antiperovskite MnGaN/MgO/CoFeB perpendicular magnetic tunnel junctions",

abstract = "We report on the tunnel magnetoresistance (TMR) effect of perpendicular magnetic tunnel junctions (p-MTJs) composed of a ferromagnetic antiperovskite MnGaN film with perpendicular magnetic anisotropy. The p-MTJ multilayer stack with MnGaN/Mg/MgO/Fe/CoFeB was used to control the MgO interface conditions by the Mg and Fe insertion layers. The Mg insertion under the MgO barrier enhanced the perpendicular anisotropy of the top Fe/CoFeB layers with post-annealing process, and thus nearly perfect perpendicular magnetization was realized. A perpendicular TMR ratio up to 3.7% ∼ 3.8 % was obtained at room temperature. The obtained low TMR ratio is mainly attributed to the imperfect MgO barrier, which includes many lattice-misfit dislocations at the MnGaN/MgO interface due to the large lattice mismatch of 8%. This paper suggests that improving the interface state and reducing the lattice mismatch will be required to observe a higher perpendicular TMR ratio using an MnGaN electrode.",

keywords = "Antiperovskite, MnGaN, Perpendicular magnetic anisotropy, tunnel magnetoresistance",

author = "Hwachol Lee and Hiroaki Sukegawa and Jun Liu and Zhenchao Wen and Seiji Mitani and Kazuhiro Hono",

year = "2016",

month = jul,

doi = "10.1109/TMAG.2016.2519283",

language = "English",

volume = "52",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Tunnel magnetoresistance of ferromagnetic antiperovskite MnGaN/MgO/CoFeB perpendicular magnetic tunnel junctions

AU - Lee, Hwachol

AU - Sukegawa, Hiroaki

AU - Liu, Jun

AU - Wen, Zhenchao

AU - Mitani, Seiji

AU - Hono, Kazuhiro

PY - 2016/7

Y1 - 2016/7

N2 - We report on the tunnel magnetoresistance (TMR) effect of perpendicular magnetic tunnel junctions (p-MTJs) composed of a ferromagnetic antiperovskite MnGaN film with perpendicular magnetic anisotropy. The p-MTJ multilayer stack with MnGaN/Mg/MgO/Fe/CoFeB was used to control the MgO interface conditions by the Mg and Fe insertion layers. The Mg insertion under the MgO barrier enhanced the perpendicular anisotropy of the top Fe/CoFeB layers with post-annealing process, and thus nearly perfect perpendicular magnetization was realized. A perpendicular TMR ratio up to 3.7% ∼ 3.8 % was obtained at room temperature. The obtained low TMR ratio is mainly attributed to the imperfect MgO barrier, which includes many lattice-misfit dislocations at the MnGaN/MgO interface due to the large lattice mismatch of 8%. This paper suggests that improving the interface state and reducing the lattice mismatch will be required to observe a higher perpendicular TMR ratio using an MnGaN electrode.

AB - We report on the tunnel magnetoresistance (TMR) effect of perpendicular magnetic tunnel junctions (p-MTJs) composed of a ferromagnetic antiperovskite MnGaN film with perpendicular magnetic anisotropy. The p-MTJ multilayer stack with MnGaN/Mg/MgO/Fe/CoFeB was used to control the MgO interface conditions by the Mg and Fe insertion layers. The Mg insertion under the MgO barrier enhanced the perpendicular anisotropy of the top Fe/CoFeB layers with post-annealing process, and thus nearly perfect perpendicular magnetization was realized. A perpendicular TMR ratio up to 3.7% ∼ 3.8 % was obtained at room temperature. The obtained low TMR ratio is mainly attributed to the imperfect MgO barrier, which includes many lattice-misfit dislocations at the MnGaN/MgO interface due to the large lattice mismatch of 8%. This paper suggests that improving the interface state and reducing the lattice mismatch will be required to observe a higher perpendicular TMR ratio using an MnGaN electrode.

KW - Antiperovskite

KW - MnGaN

KW - Perpendicular magnetic anisotropy

KW - tunnel magnetoresistance

UR - http://www.scopus.com/inward/record.url?scp=84977079295&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84977079295&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2016.2519283

DO - 10.1109/TMAG.2016.2519283

M3 - Article

AN - SCOPUS:84977079295

VL - 52

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 7

M1 - 7390074

ER -