Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeBMgOCoFeB pseudo-spin-valves annealed at high temperature

S. Ikeda; J. Hayakawa; Y. Ashizawa; Y. M. Lee; K. Miura; H. Hasegawa; M. Tsunoda; F. Matsukura; H. Ohno

doi:10.1063/1.2976435

Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeBMgOCoFeB pseudo-spin-valves annealed at high temperature

S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

990 Citations (Scopus)

Abstract

The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300 K in Ta Co20 Fe60 B20 MgO Co20 Fe60 B20 Ta pseudo-spin-valve magnetic tunnel junction annealed at 525 °C. To obtain high TMR ratio, it was found critical to anneal the structure at high temperature above 500 °C, while suppressing the Ta diffusion into CoFeB electrodes and in particular to the CoFeBMgO interface. X-ray diffraction measurement of MgO on Si O2 or Co20 Fe60 B20 shows that an improvement of MgO barrier quality, in terms of the degree of the (001) orientation and stress relaxation, takes place at annealing temperatures above 450 °C. The highest TMR ratio observed at 5 K was 1144%.

Original language	English
Article number	082508
Journal	Applied Physics Letters
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.2976435
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeBMgOCoFeB pseudo-spin-valves annealed at high temperature. / Ikeda, S.; Hayakawa, J.; Ashizawa, Y.; Lee, Y. M.; Miura, K.; Hasegawa, H.; Tsunoda, M.; Matsukura, F.; Ohno, H.

In: Applied Physics Letters, Vol. 93, No. 8, 082508, 2008.

Research output: Contribution to journal › Article › peer-review

@article{8228f932f17b4a0193512564853f0788,

title = "Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeBMgOCoFeB pseudo-spin-valves annealed at high temperature",

abstract = "The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300 K in Ta Co20 Fe60 B20 MgO Co20 Fe60 B20 Ta pseudo-spin-valve magnetic tunnel junction annealed at 525 °C. To obtain high TMR ratio, it was found critical to anneal the structure at high temperature above 500 °C, while suppressing the Ta diffusion into CoFeB electrodes and in particular to the CoFeBMgO interface. X-ray diffraction measurement of MgO on Si O2 or Co20 Fe60 B20 shows that an improvement of MgO barrier quality, in terms of the degree of the (001) orientation and stress relaxation, takes place at annealing temperatures above 450 °C. The highest TMR ratio observed at 5 K was 1144%.",

author = "S. Ikeda and J. Hayakawa and Y. Ashizawa and Lee, {Y. M.} and K. Miura and H. Hasegawa and M. Tsunoda and F. Matsukura and H. Ohno",

note = "Funding Information: This work was supported in part by “High-Performance Low-Power Consumption Spin Devices and Storage Systems” program under Research and Development for Next-Generation Information Technology of MEXT. The authors wish to thank Y. Ohno, I. Morita, and T. Hirata for their technical support in MTJ fabrication and valuable discussions. ",

year = "2008",

doi = "10.1063/1.2976435",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeBMgOCoFeB pseudo-spin-valves annealed at high temperature

AU - Ikeda, S.

AU - Hayakawa, J.

AU - Ashizawa, Y.

AU - Lee, Y. M.

AU - Miura, K.

AU - Hasegawa, H.

AU - Tsunoda, M.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: This work was supported in part by “High-Performance Low-Power Consumption Spin Devices and Storage Systems” program under Research and Development for Next-Generation Information Technology of MEXT. The authors wish to thank Y. Ohno, I. Morita, and T. Hirata for their technical support in MTJ fabrication and valuable discussions.

PY - 2008

Y1 - 2008

N2 - The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300 K in Ta Co20 Fe60 B20 MgO Co20 Fe60 B20 Ta pseudo-spin-valve magnetic tunnel junction annealed at 525 °C. To obtain high TMR ratio, it was found critical to anneal the structure at high temperature above 500 °C, while suppressing the Ta diffusion into CoFeB electrodes and in particular to the CoFeBMgO interface. X-ray diffraction measurement of MgO on Si O2 or Co20 Fe60 B20 shows that an improvement of MgO barrier quality, in terms of the degree of the (001) orientation and stress relaxation, takes place at annealing temperatures above 450 °C. The highest TMR ratio observed at 5 K was 1144%.

AB - The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300 K in Ta Co20 Fe60 B20 MgO Co20 Fe60 B20 Ta pseudo-spin-valve magnetic tunnel junction annealed at 525 °C. To obtain high TMR ratio, it was found critical to anneal the structure at high temperature above 500 °C, while suppressing the Ta diffusion into CoFeB electrodes and in particular to the CoFeBMgO interface. X-ray diffraction measurement of MgO on Si O2 or Co20 Fe60 B20 shows that an improvement of MgO barrier quality, in terms of the degree of the (001) orientation and stress relaxation, takes place at annealing temperatures above 450 °C. The highest TMR ratio observed at 5 K was 1144%.

UR - http://www.scopus.com/inward/record.url?scp=51349167171&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51349167171&partnerID=8YFLogxK

U2 - 10.1063/1.2976435

DO - 10.1063/1.2976435

M3 - Article

AN - SCOPUS:51349167171

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 082508

ER -

Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeBMgOCoFeB pseudo-spin-valves annealed at high temperature

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