Tunnel magnetoresistance in textured Co2 FeAl/MgO/CoFe magnetic tunnel junctions on a Si/ SiO2 amorphous substrate

Zhenchao Wen, Hiroaki Sukegawa, Seiji Mitani, Koichiro Inomata

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Magnetic tunnel junctions with B2 -ordered Co2 FeAl full Heusler alloy as a ferromagnetic electrode were fabricated by sputtering on thermally oxidized Si/ SiO2 amorphous substrates. A Co2 FeAl/MgO/ Co50 Fe50 structure showed a highly (001)-textured structure and the tunneling magnetoresistance (TMR) ratio of 166% at room temperature and 252% at 48 K were achieved. The temperature dependence of TMR can be fitted with spin wave excitation model, and the bias voltage dependence of differential conductance demonstrated that the high TMR was mainly contributed by coherent tunneling. This work suggests the B2 -Co2 FeAl is one of the promising candidates for practical spintronic applications.

Original languageEnglish
Article number192505
JournalApplied Physics Letters
Volume98
Issue number19
DOIs
Publication statusPublished - 2011 May 9

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Tunnel magnetoresistance in textured Co<sub>2</sub> FeAl/MgO/CoFe magnetic tunnel junctions on a Si/ SiO<sub>2</sub> amorphous substrate'. Together they form a unique fingerprint.

  • Cite this