Tunnel magnetoresistance in magnetic tunnel junctions with Co2Fe (Al, Si) full-Heusler films

N. Tezuka, N. Ikeda, A. Miyazaki, S. Okamura, M. Kikuchi, S. Sugimoto, K. Inomata

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The magnetoresistance effect for a magnetic tunnel junction (MTJ) with Co2FeAl0.5Si0.5 electrodes on Cr buffered MgO (0 0 1) substrate has been investigated. The MTJ with B2-type Co2FeAl0.5Si0.5 electrode exhibited tunnel magnetoresistance (TMR) ratio of 76% at room temperature (RT) and 106% at 5 K, while that with L21 structure showed 51% and 78% at RT and 5 K, respectively. For both cases, the bias voltage dependence of TMR ratio is almost the same, but only for the MTJs with a Co2FeAl0.5Si0.5 electrode annealed at 600 °C shows a dip around -200 mV.

Original languageEnglish
Pages (from-to)1940-1942
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
Publication statusPublished - 2007 Mar

Keywords

  • Full-Heusler
  • Half metallic ferromagnet
  • Magnetic tunnel junction
  • Tunnel magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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