Tunnel magnetoresistance in magnetic tunnel junctions with Co2Fe (Al, Si) full-Heusler films

N. Tezuka; N. Ikeda; A. Miyazaki; S. Okamura; M. Kikuchi; S. Sugimoto; K. Inomata

doi:10.1016/j.jmmm.2006.10.812

Tunnel magnetoresistance in magnetic tunnel junctions with Co₂Fe (Al, Si) full-Heusler films

N. Tezuka, N. Ikeda, A. Miyazaki, S. Okamura, M. Kikuchi, S. Sugimoto, K. Inomata

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The magnetoresistance effect for a magnetic tunnel junction (MTJ) with Co₂FeAl_0.5Si_0.5 electrodes on Cr buffered MgO (0 0 1) substrate has been investigated. The MTJ with B2-type Co₂FeAl_0.5Si_0.5 electrode exhibited tunnel magnetoresistance (TMR) ratio of 76% at room temperature (RT) and 106% at 5 K, while that with L2₁ structure showed 51% and 78% at RT and 5 K, respectively. For both cases, the bias voltage dependence of TMR ratio is almost the same, but only for the MTJs with a Co₂FeAl_0.5Si_0.5 electrode annealed at 600 °C shows a dip around -200 mV.

Original language	English
Pages (from-to)	1940-1942
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.812
Publication status	Published - 2007 Mar

Keywords

Full-Heusler
Half metallic ferromagnet
Magnetic tunnel junction
Tunnel magnetoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{098469db0cad44d6b648784bcddd7ee4,

title = "Tunnel magnetoresistance in magnetic tunnel junctions with Co2Fe (Al, Si) full-Heusler films",

abstract = "The magnetoresistance effect for a magnetic tunnel junction (MTJ) with Co2FeAl0.5Si0.5 electrodes on Cr buffered MgO (0 0 1) substrate has been investigated. The MTJ with B2-type Co2FeAl0.5Si0.5 electrode exhibited tunnel magnetoresistance (TMR) ratio of 76% at room temperature (RT) and 106% at 5 K, while that with L21 structure showed 51% and 78% at RT and 5 K, respectively. For both cases, the bias voltage dependence of TMR ratio is almost the same, but only for the MTJs with a Co2FeAl0.5Si0.5 electrode annealed at 600 °C shows a dip around -200 mV.",

keywords = "Full-Heusler, Half metallic ferromagnet, Magnetic tunnel junction, Tunnel magnetoresistance",

author = "N. Tezuka and N. Ikeda and A. Miyazaki and S. Okamura and M. Kikuchi and S. Sugimoto and K. Inomata",

note = "Funding Information: This work was partly supported by the IT-Program RR2002 from MEXT and Industrial Technology Research Grant in {\textquoteleft}0* from New Energy and Industrial Technology Development Organization of Japan. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2007",

month = mar,

doi = "10.1016/j.jmmm.2006.10.812",

language = "English",

volume = "310",

pages = "1940--1942",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "2 SUPPL. PART 3",

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TY - JOUR

T1 - Tunnel magnetoresistance in magnetic tunnel junctions with Co2Fe (Al, Si) full-Heusler films

AU - Tezuka, N.

AU - Ikeda, N.

AU - Miyazaki, A.

AU - Okamura, S.

AU - Kikuchi, M.

AU - Sugimoto, S.

AU - Inomata, K.

N1 - Funding Information: This work was partly supported by the IT-Program RR2002 from MEXT and Industrial Technology Research Grant in ‘0* from New Energy and Industrial Technology Development Organization of Japan. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007/3

Y1 - 2007/3

N2 - The magnetoresistance effect for a magnetic tunnel junction (MTJ) with Co2FeAl0.5Si0.5 electrodes on Cr buffered MgO (0 0 1) substrate has been investigated. The MTJ with B2-type Co2FeAl0.5Si0.5 electrode exhibited tunnel magnetoresistance (TMR) ratio of 76% at room temperature (RT) and 106% at 5 K, while that with L21 structure showed 51% and 78% at RT and 5 K, respectively. For both cases, the bias voltage dependence of TMR ratio is almost the same, but only for the MTJs with a Co2FeAl0.5Si0.5 electrode annealed at 600 °C shows a dip around -200 mV.

AB - The magnetoresistance effect for a magnetic tunnel junction (MTJ) with Co2FeAl0.5Si0.5 electrodes on Cr buffered MgO (0 0 1) substrate has been investigated. The MTJ with B2-type Co2FeAl0.5Si0.5 electrode exhibited tunnel magnetoresistance (TMR) ratio of 76% at room temperature (RT) and 106% at 5 K, while that with L21 structure showed 51% and 78% at RT and 5 K, respectively. For both cases, the bias voltage dependence of TMR ratio is almost the same, but only for the MTJs with a Co2FeAl0.5Si0.5 electrode annealed at 600 °C shows a dip around -200 mV.

KW - Full-Heusler

KW - Half metallic ferromagnet

KW - Magnetic tunnel junction

KW - Tunnel magnetoresistance

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U2 - 10.1016/j.jmmm.2006.10.812

DO - 10.1016/j.jmmm.2006.10.812

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JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

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IS - 2 SUPPL. PART 3

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