Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film

Atsushi Sugihara; Kazuya Suzuki; Terunobu Miyazaki; Shigemi Mizukami

doi:10.7567/JJAP.54.078002

Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D0₂₂-Mn₃Ge film

Atsushi Sugihara, Kazuya Suzuki, Terunobu Miyazaki, Shigemi Mizukami

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D0₂₂ structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D0₂₂-Mn₃Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D0₂₂-Mn₃Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.

Original language	English
Article number	078002
Journal	Japanese journal of applied physics
Volume	54
Issue number	7
DOIs	https://doi.org/10.7567/JJAP.54.078002
Publication status	Published - 2015 Jul 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D0₂₂-Mn₃Ge film. / Sugihara, Atsushi; Suzuki, Kazuya; Miyazaki, Terunobu; Mizukami, Shigemi.

In: Japanese journal of applied physics, Vol. 54, No. 7, 078002, 01.07.2015.

Research output: Contribution to journal › Article › peer-review

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