Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film

Atsushi Sugihara, Kazuya Suzuki, Terunobu Miyazaki, Shigemi Mizukami

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10 Citations (Scopus)

Abstract

We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.

Original languageEnglish
Article number078002
JournalJapanese journal of applied physics
Volume54
Issue number7
DOIs
Publication statusPublished - 2015 Jul 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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