Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film

Atsushi Sugihara; Kazuya Suzuki; Terunobu Miyazaki; Shigemi Mizukami

doi:10.7567/JJAP.54.078002

Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D0₂₂-Mn₃Ge film

Atsushi Sugihara, Kazuya Suzuki, Terunobu Miyazaki, Shigemi Mizukami

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D0₂₂ structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D0₂₂-Mn₃Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D0₂₂-Mn₃Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.

Original language	English
Article number	078002
Journal	Japanese journal of applied physics
Volume	54
Issue number	7
DOIs	https://doi.org/10.7567/JJAP.54.078002
Publication status	Published - 2015 Jul 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAP.54.078002

Cite this

Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D0₂₂-Mn₃Ge film. / Sugihara, Atsushi; Suzuki, Kazuya; Miyazaki, Terunobu; Mizukami, Shigemi.

In: Japanese journal of applied physics, Vol. 54, No. 7, 078002, 01.07.2015.

Research output: Contribution to journal › Article › peer-review

@article{c640ad18b158457587a01e117c4e10bf,

title = "Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film",

abstract = "We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.",

author = "Atsushi Sugihara and Kazuya Suzuki and Terunobu Miyazaki and Shigemi Mizukami",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

year = "2015",

month = jul,

day = "1",

doi = "10.7567/JJAP.54.078002",

language = "English",

volume = "54",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7",

}

TY - JOUR

T1 - Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film

AU - Sugihara, Atsushi

AU - Suzuki, Kazuya

AU - Miyazaki, Terunobu

AU - Mizukami, Shigemi

PY - 2015/7/1

Y1 - 2015/7/1

N2 - We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.

AB - We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.

UR - http://www.scopus.com/inward/record.url?scp=84933565401&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84933565401&partnerID=8YFLogxK

U2 - 10.7567/JJAP.54.078002

DO - 10.7567/JJAP.54.078002

M3 - Article

AN - SCOPUS:84933565401

VL - 54

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7

M1 - 078002

ER -

Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D0₂₂-Mn₃Ge film

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this