TY - JOUR
T1 - Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film
AU - Sugihara, Atsushi
AU - Suzuki, Kazuya
AU - Miyazaki, Terunobu
AU - Mizukami, Shigemi
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/7/1
Y1 - 2015/7/1
N2 - We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.
AB - We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.
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U2 - 10.7567/JJAP.54.078002
DO - 10.7567/JJAP.54.078002
M3 - Article
AN - SCOPUS:84933565401
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
M1 - 078002
ER -