Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier

S. Tsunegi; Y. Sakuraba; M. Oogane; N. D. Telling; L. R. Shelford; E. Arenholz; G. Van Der Laan; R. J. Hicken; K. Takanashi; Y. Ando

doi:10.1088/0022-3727/42/19/195004

Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier

S. Tsunegi, Y. Sakuraba, M. Oogane, N. D. Telling, L. R. Shelford, E. Arenholz, G. Van Der Laan, R. J. Hicken, K. Takanashi, Y. Ando

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Epitaxially grown magnetic tunnel junctions (MTJs) with a stacking structure of Co₂MnSi/MgO/CoFe were fabricated. Their tunnel magnetoresistance (TMR) effects were investigated. The TMR ratio and tunnelling conductance characteristics of MTJs were considerably different between those with an MgO barrier prepared using sputtering (SP-MTJ) and those prepared using EB evaporation (EB-MTJ). The EB-MTJ exhibited a very large TMR ratio of 217% at room temperature and 753% at 2 K. The bias voltage dependence of the tunnelling conductance in the parallel magnetic configuration for the EB-MTJ suggests that the observed large TMR ratio at RT results from the coherent tunnelling process through the crystalline MgO barrier. The tunnelling conductance in the anti-parallel magnetic configuration suggests that the large temperature dependence of the TMR ratio results from the inelastic spin-flip tunnelling process.

Original language	English
Article number	195004
Journal	Journal of Physics D: Applied Physics
Volume	42
Issue number	19
DOIs	https://doi.org/10.1088/0022-3727/42/19/195004
Publication status	Published - 2009

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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Tsunegi, S., Sakuraba, Y., Oogane, M., Telling, N. D., Shelford, L. R., Arenholz, E., Van Der Laan, G., Hicken, R. J., Takanashi, K., & Ando, Y. (2009). Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier. Journal of Physics D: Applied Physics, 42(19), [195004]. https://doi.org/10.1088/0022-3727/42/19/195004

Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier. / Tsunegi, S.; Sakuraba, Y.; Oogane, M.; Telling, N. D.; Shelford, L. R.; Arenholz, E.; Van Der Laan, G.; Hicken, R. J.; Takanashi, K.; Ando, Y.

In: Journal of Physics D: Applied Physics, Vol. 42, No. 19, 195004, 2009.

Research output: Contribution to journal › Article › peer-review

@article{45807911236f4d458fa72d82b5c0b519,

title = "Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier",

abstract = "Epitaxially grown magnetic tunnel junctions (MTJs) with a stacking structure of Co2MnSi/MgO/CoFe were fabricated. Their tunnel magnetoresistance (TMR) effects were investigated. The TMR ratio and tunnelling conductance characteristics of MTJs were considerably different between those with an MgO barrier prepared using sputtering (SP-MTJ) and those prepared using EB evaporation (EB-MTJ). The EB-MTJ exhibited a very large TMR ratio of 217% at room temperature and 753% at 2 K. The bias voltage dependence of the tunnelling conductance in the parallel magnetic configuration for the EB-MTJ suggests that the observed large TMR ratio at RT results from the coherent tunnelling process through the crystalline MgO barrier. The tunnelling conductance in the anti-parallel magnetic configuration suggests that the large temperature dependence of the TMR ratio results from the inelastic spin-flip tunnelling process.",

author = "S. Tsunegi and Y. Sakuraba and M. Oogane and Telling, {N. D.} and Shelford, {L. R.} and E. Arenholz and {Van Der Laan}, G. and Hicken, {R. J.} and K. Takanashi and Y. Ando",

year = "2009",

doi = "10.1088/0022-3727/42/19/195004",

language = "English",

volume = "42",

journal = "Journal Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd.",

number = "19",

}

TY - JOUR

T1 - Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier

AU - Tsunegi, S.

AU - Sakuraba, Y.

AU - Oogane, M.

AU - Telling, N. D.

AU - Shelford, L. R.

AU - Arenholz, E.

AU - Van Der Laan, G.

AU - Hicken, R. J.

AU - Takanashi, K.

AU - Ando, Y.

PY - 2009

Y1 - 2009

N2 - Epitaxially grown magnetic tunnel junctions (MTJs) with a stacking structure of Co2MnSi/MgO/CoFe were fabricated. Their tunnel magnetoresistance (TMR) effects were investigated. The TMR ratio and tunnelling conductance characteristics of MTJs were considerably different between those with an MgO barrier prepared using sputtering (SP-MTJ) and those prepared using EB evaporation (EB-MTJ). The EB-MTJ exhibited a very large TMR ratio of 217% at room temperature and 753% at 2 K. The bias voltage dependence of the tunnelling conductance in the parallel magnetic configuration for the EB-MTJ suggests that the observed large TMR ratio at RT results from the coherent tunnelling process through the crystalline MgO barrier. The tunnelling conductance in the anti-parallel magnetic configuration suggests that the large temperature dependence of the TMR ratio results from the inelastic spin-flip tunnelling process.

AB - Epitaxially grown magnetic tunnel junctions (MTJs) with a stacking structure of Co2MnSi/MgO/CoFe were fabricated. Their tunnel magnetoresistance (TMR) effects were investigated. The TMR ratio and tunnelling conductance characteristics of MTJs were considerably different between those with an MgO barrier prepared using sputtering (SP-MTJ) and those prepared using EB evaporation (EB-MTJ). The EB-MTJ exhibited a very large TMR ratio of 217% at room temperature and 753% at 2 K. The bias voltage dependence of the tunnelling conductance in the parallel magnetic configuration for the EB-MTJ suggests that the observed large TMR ratio at RT results from the coherent tunnelling process through the crystalline MgO barrier. The tunnelling conductance in the anti-parallel magnetic configuration suggests that the large temperature dependence of the TMR ratio results from the inelastic spin-flip tunnelling process.

UR - http://www.scopus.com/inward/record.url?scp=70350676174&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70350676174&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/42/19/195004

DO - 10.1088/0022-3727/42/19/195004

M3 - Article

AN - SCOPUS:70350676174

VL - 42

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 19

M1 - 195004

ER -