Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier

S. Tsunegi, Y. Sakuraba, M. Oogane, N. D. Telling, L. R. Shelford, E. Arenholz, G. Van Der Laan, R. J. Hicken, K. Takanashi, Y. Ando

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15 Citations (Scopus)

Abstract

Epitaxially grown magnetic tunnel junctions (MTJs) with a stacking structure of Co2MnSi/MgO/CoFe were fabricated. Their tunnel magnetoresistance (TMR) effects were investigated. The TMR ratio and tunnelling conductance characteristics of MTJs were considerably different between those with an MgO barrier prepared using sputtering (SP-MTJ) and those prepared using EB evaporation (EB-MTJ). The EB-MTJ exhibited a very large TMR ratio of 217% at room temperature and 753% at 2 K. The bias voltage dependence of the tunnelling conductance in the parallel magnetic configuration for the EB-MTJ suggests that the observed large TMR ratio at RT results from the coherent tunnelling process through the crystalline MgO barrier. The tunnelling conductance in the anti-parallel magnetic configuration suggests that the large temperature dependence of the TMR ratio results from the inelastic spin-flip tunnelling process.

Original languageEnglish
Article number195004
JournalJournal of Physics D: Applied Physics
Volume42
Issue number19
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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