Tunnel magnetoresistance for magnetic tunnel junctions with a disordered Co 2(Cr 1-xFe x)Al full-heusler alloy electrode

Susumu Okamura, Aya Miyazaki, Nobuki Tezuka, Koichiro Inomata

Research output: Contribution to journalArticle

Abstract

We have investigated the dependence of the crystal structure of the electrode on tunnel magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) using a Co 2Cr 1-xFe x)Al (x= 0.4, 1) electrode. The TMR for x= 1 and 0.4 are respective larger and smaller for the A2 structure than the B2 structure, which is consistent with the calculated spin polarizations. The maximum TMR of 48% is obtained at room temperature (RT) for the MTJ with the A2 type Co 2FeAl electrode. However, the TMR for the B2 type Co 2(Cr 0.6Fe 0.4)Al-based MTJ is much smaller than the value expected from the spin polarization. This reduction of the TMR for x = 0.4 might be due to the Co-Cr type atomic site disordering involving in the B2 structure.

Original languageEnglish
Pages (from-to)276-280
Number of pages5
JournalIEEJ Transactions on Fundamentals and Materials
Volume126
Issue number5
DOIs
Publication statusPublished - 2006 May 11

Keywords

  • B2 structure
  • Full-Heusler alloy
  • Half-metallic ferromagnet
  • Magnetic tunnel junctions
  • Spin polarization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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