Abstract
We have investigated the dependence of the crystal structure of the electrode on tunnel magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) using a Co 2Cr 1-xFe x)Al (x= 0.4, 1) electrode. The TMR for x= 1 and 0.4 are respective larger and smaller for the A2 structure than the B2 structure, which is consistent with the calculated spin polarizations. The maximum TMR of 48% is obtained at room temperature (RT) for the MTJ with the A2 type Co 2FeAl electrode. However, the TMR for the B2 type Co 2(Cr 0.6Fe 0.4)Al-based MTJ is much smaller than the value expected from the spin polarization. This reduction of the TMR for x = 0.4 might be due to the Co-Cr type atomic site disordering involving in the B2 structure.
Original language | English |
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Pages (from-to) | 276-280 |
Number of pages | 5 |
Journal | IEEJ Transactions on Fundamentals and Materials |
Volume | 126 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2006 |
Keywords
- B2 structure
- Full-Heusler alloy
- Half-metallic ferromagnet
- Magnetic tunnel junctions
- Spin polarization
ASJC Scopus subject areas
- Electrical and Electronic Engineering