Tunnel magnetoresistance for magnetic tunnel junctions with a disordered Co 2(Cr 1-xFe x)Al full-heusler alloy electrode

Susumu Okamura; Aya Miyazaki; Nobuki Tezuka; Koichiro Inomata

doi:10.1541/ieejfms.126.276

Tunnel magnetoresistance for magnetic tunnel junctions with a disordered Co ₂(Cr _1-xFe _x)Al full-heusler alloy electrode

Susumu Okamura, Aya Miyazaki, Nobuki Tezuka, Koichiro Inomata

ENG - Materials Science

Research output: Contribution to journal › Article

Abstract

We have investigated the dependence of the crystal structure of the electrode on tunnel magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) using a Co ₂Cr _1-xFe _x)Al (x= 0.4, 1) electrode. The TMR for x= 1 and 0.4 are respective larger and smaller for the A2 structure than the B2 structure, which is consistent with the calculated spin polarizations. The maximum TMR of 48% is obtained at room temperature (RT) for the MTJ with the A2 type Co ₂FeAl electrode. However, the TMR for the B2 type Co ₂(Cr _0.6Fe _0.4)Al-based MTJ is much smaller than the value expected from the spin polarization. This reduction of the TMR for x = 0.4 might be due to the Co-Cr type atomic site disordering involving in the B2 structure.

Original language	English
Pages (from-to)	276-280
Number of pages	5
Journal	IEEJ Transactions on Fundamentals and Materials
Volume	126
Issue number	5
DOIs	https://doi.org/10.1541/ieejfms.126.276
Publication status	Published - 2006 May 11

Keywords

B2 structure
Full-Heusler alloy
Half-metallic ferromagnet
Magnetic tunnel junctions
Spin polarization

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Okamura, S., Miyazaki, A., Tezuka, N., & Inomata, K. (2006). Tunnel magnetoresistance for magnetic tunnel junctions with a disordered Co ₂(Cr _1-xFe _x)Al full-heusler alloy electrode. IEEJ Transactions on Fundamentals and Materials, 126(5), 276-280. https://doi.org/10.1541/ieejfms.126.276

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title = "Tunnel magnetoresistance for magnetic tunnel junctions with a disordered Co 2(Cr 1-xFe x)Al full-heusler alloy electrode",

abstract = "We have investigated the dependence of the crystal structure of the electrode on tunnel magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) using a Co 2Cr 1-xFe x)Al (x= 0.4, 1) electrode. The TMR for x= 1 and 0.4 are respective larger and smaller for the A2 structure than the B2 structure, which is consistent with the calculated spin polarizations. The maximum TMR of 48% is obtained at room temperature (RT) for the MTJ with the A2 type Co 2FeAl electrode. However, the TMR for the B2 type Co 2(Cr 0.6Fe 0.4)Al-based MTJ is much smaller than the value expected from the spin polarization. This reduction of the TMR for x = 0.4 might be due to the Co-Cr type atomic site disordering involving in the B2 structure.",

keywords = "B2 structure, Full-Heusler alloy, Half-metallic ferromagnet, Magnetic tunnel junctions, Spin polarization",

author = "Susumu Okamura and Aya Miyazaki and Nobuki Tezuka and Koichiro Inomata",

year = "2006",

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T1 - Tunnel magnetoresistance for magnetic tunnel junctions with a disordered Co 2(Cr 1-xFe x)Al full-heusler alloy electrode

AU - Okamura, Susumu

AU - Miyazaki, Aya

AU - Tezuka, Nobuki

AU - Inomata, Koichiro

PY - 2006/5/11

Y1 - 2006/5/11

N2 - We have investigated the dependence of the crystal structure of the electrode on tunnel magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) using a Co 2Cr 1-xFe x)Al (x= 0.4, 1) electrode. The TMR for x= 1 and 0.4 are respective larger and smaller for the A2 structure than the B2 structure, which is consistent with the calculated spin polarizations. The maximum TMR of 48% is obtained at room temperature (RT) for the MTJ with the A2 type Co 2FeAl electrode. However, the TMR for the B2 type Co 2(Cr 0.6Fe 0.4)Al-based MTJ is much smaller than the value expected from the spin polarization. This reduction of the TMR for x = 0.4 might be due to the Co-Cr type atomic site disordering involving in the B2 structure.

AB - We have investigated the dependence of the crystal structure of the electrode on tunnel magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) using a Co 2Cr 1-xFe x)Al (x= 0.4, 1) electrode. The TMR for x= 1 and 0.4 are respective larger and smaller for the A2 structure than the B2 structure, which is consistent with the calculated spin polarizations. The maximum TMR of 48% is obtained at room temperature (RT) for the MTJ with the A2 type Co 2FeAl electrode. However, the TMR for the B2 type Co 2(Cr 0.6Fe 0.4)Al-based MTJ is much smaller than the value expected from the spin polarization. This reduction of the TMR for x = 0.4 might be due to the Co-Cr type atomic site disordering involving in the B2 structure.

KW - B2 structure

KW - Full-Heusler alloy

KW - Half-metallic ferromagnet

KW - Magnetic tunnel junctions

KW - Spin polarization

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