Tunnel magnetoresistance for junctions with epitaxial full-Heusler Co 2FeAl0.5Si0.5 electrodes with B2 and L2 1 structures

N. Tezuka, N. Ikeda, A. Miyazaki, S. Sugimoto, M. Kikuchi, K. Inomata

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The tunnel magnetoresistance (TMR) effect has been investigated for magnetic tunnel junctions with epitaxial Co2FeAl0.5Si 0.5 Heusler electrodes with 52 and L21 structures on a Cr-bufferd MgO substrate. The epitaxially grown Co2FeAl 0.5Si0.5 has B2 structure when annealed below 400 °C, and has L21 structure for annealing above 450 °C. The TMR ratio of 76% at room temperature and 106% at 5 K were obtained for a MgO(001)/Cr/B2-type Co2FeAl0.5Si0.5/Al oxide/ Co75Fe25/IrMn/Ta. The TMR ratio is larger than that of magnetic tunnel junction with an L21-type electrode, which may be due to the smoother surface of the B2 structure and disordered L21 structure due to the Cr atom interdiffusion.

Original languageEnglish
Article number112514
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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