Tunnel magnetoresistance effect using perpendicularly magnetized tetragonal and cubic Mn-Co-Ga Heusler alloy electrode

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Abstract

Epitaxially grown tetragonal and cubic Mn-Co-Ga thin films were fabricated onto single crystalline Cr (001) under a layer. High perpendicular magnetic anisotropy is achieved in the tetragonal Mn2.3Co0.4Ga 1.3 film, and a small, unexpected perpendicular magnetic anisotropy was induced in the cubic Mn1.8Co1.2Ga1.0 film as well. The tunnel magnetoresistance (TMR) effect of the Mn-Co-Ga/MgO/CoFeB magnetic tunnel junctions (MTJs) were investigated. TMR ratios of 5% and 11% were observed at room temperature for the MTJs using tetragonal Mn 2.3Co0.4Ga1.3 and cubic Mn1.8Co 1.2Ga1.0 electrodes, respectively. The composition dependence is discussed briefly.

Original languageEnglish
Article number17C704
JournalJournal of Applied Physics
Volume115
Issue number17
DOIs
Publication statusPublished - 2014 May 7

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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