Abstract
We demonstrated that a large TMR ratio of 753 % has been observed at 2 K in a MTJ using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. At room temperature (RT), we also have observed a large TMR ratio of 217 %, which value at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio was still large. In order to improve the interface, we investigated the TMR effect in Co2MnSi/CoFeB(0-2 nm)/MgO/CoFe MTJs. TMR ratio was enhanced by inserting a thin CoFeB layer at the Co2MnSi/MgO interface. The MTJ with CoFeB thickness of 0.5 nm exhibited the highest TMR ratio. From the conductance-voltage measurements for the fabricated MTJs, we inferred that the highly spin polarized electron created in Co2MnSi can conserve the polarization through the 0.5 nm thick FeB layer.
Original language | English |
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Title of host publication | Spintronics |
Subtitle of host publication | From Materials to Devices |
Publisher | Springer Netherlands |
Pages | 355-366 |
Number of pages | 12 |
ISBN (Electronic) | 9789048138326 |
ISBN (Print) | 9789048138319 |
DOIs | |
Publication status | Published - 2013 Jan 1 |
ASJC Scopus subject areas
- Engineering(all)
- Materials Science(all)