Tunnel magnetoresistance effect in tunnel junctions with Co2MnSi heusler alloy electrode and MgO barrier

Yasuo Ando; Sumito Tsunegi; Mikihiko Oogane; Hiroshi Naganuma; Koki Takanashi

doi:10.1007/978-90-481-3832-6_17

Tunnel magnetoresistance effect in tunnel junctions with Co₂MnSi heusler alloy electrode and MgO barrier

Yasuo Ando, Sumito Tsunegi, Mikihiko Oogane, Hiroshi Naganuma, Koki Takanashi

Research output: Chapter in Book/Report/Conference proceeding › Chapter

2 Citations (Scopus)

Abstract

We demonstrated that a large TMR ratio of 753 % has been observed at 2 K in a MTJ using a Co₂MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. At room temperature (RT), we also have observed a large TMR ratio of 217 %, which value at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio was still large. In order to improve the interface, we investigated the TMR effect in Co₂MnSi/CoFeB(0-2 nm)/MgO/CoFe MTJs. TMR ratio was enhanced by inserting a thin CoFeB layer at the Co₂MnSi/MgO interface. The MTJ with CoFeB thickness of 0.5 nm exhibited the highest TMR ratio. From the conductance-voltage measurements for the fabricated MTJs, we inferred that the highly spin polarized electron created in Co₂MnSi can conserve the polarization through the 0.5 nm thick FeB layer.

Original language	English
Title of host publication	Spintronics
Subtitle of host publication	From Materials to Devices
Publisher	Springer Netherlands
Pages	355-366
Number of pages	12
ISBN (Electronic)	9789048138326
ISBN (Print)	9789048138319
DOIs	https://doi.org/10.1007/978-90-481-3832-6_17
Publication status	Published - 2013 Jan 1

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)

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10.1007/978-90-481-3832-6_17

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title = "Tunnel magnetoresistance effect in tunnel junctions with Co2MnSi heusler alloy electrode and MgO barrier",

abstract = "We demonstrated that a large TMR ratio of 753 % has been observed at 2 K in a MTJ using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. At room temperature (RT), we also have observed a large TMR ratio of 217 %, which value at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio was still large. In order to improve the interface, we investigated the TMR effect in Co2MnSi/CoFeB(0-2 nm)/MgO/CoFe MTJs. TMR ratio was enhanced by inserting a thin CoFeB layer at the Co2MnSi/MgO interface. The MTJ with CoFeB thickness of 0.5 nm exhibited the highest TMR ratio. From the conductance-voltage measurements for the fabricated MTJs, we inferred that the highly spin polarized electron created in Co2MnSi can conserve the polarization through the 0.5 nm thick FeB layer.",

author = "Yasuo Ando and Sumito Tsunegi and Mikihiko Oogane and Hiroshi Naganuma and Koki Takanashi",

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T1 - Tunnel magnetoresistance effect in tunnel junctions with Co2MnSi heusler alloy electrode and MgO barrier

AU - Ando, Yasuo

AU - Tsunegi, Sumito

AU - Oogane, Mikihiko

AU - Naganuma, Hiroshi

AU - Takanashi, Koki

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We demonstrated that a large TMR ratio of 753 % has been observed at 2 K in a MTJ using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. At room temperature (RT), we also have observed a large TMR ratio of 217 %, which value at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio was still large. In order to improve the interface, we investigated the TMR effect in Co2MnSi/CoFeB(0-2 nm)/MgO/CoFe MTJs. TMR ratio was enhanced by inserting a thin CoFeB layer at the Co2MnSi/MgO interface. The MTJ with CoFeB thickness of 0.5 nm exhibited the highest TMR ratio. From the conductance-voltage measurements for the fabricated MTJs, we inferred that the highly spin polarized electron created in Co2MnSi can conserve the polarization through the 0.5 nm thick FeB layer.

AB - We demonstrated that a large TMR ratio of 753 % has been observed at 2 K in a MTJ using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. At room temperature (RT), we also have observed a large TMR ratio of 217 %, which value at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio was still large. In order to improve the interface, we investigated the TMR effect in Co2MnSi/CoFeB(0-2 nm)/MgO/CoFe MTJs. TMR ratio was enhanced by inserting a thin CoFeB layer at the Co2MnSi/MgO interface. The MTJ with CoFeB thickness of 0.5 nm exhibited the highest TMR ratio. From the conductance-voltage measurements for the fabricated MTJs, we inferred that the highly spin polarized electron created in Co2MnSi can conserve the polarization through the 0.5 nm thick FeB layer.

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DO - 10.1007/978-90-481-3832-6_17

M3 - Chapter

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SP - 355

EP - 366

BT - Spintronics

PB - Springer Netherlands

ER -

Tunnel magnetoresistance effect in tunnel junctions with Co₂MnSi heusler alloy electrode and MgO barrier

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